Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Many studies have been conducted in the past on compound semiconductor and wide-gap semiconductor for their possible usage in place of oxide in metal-oxidesemiconductor structures for high-speed metal-oxide-semiconductor field-effect transistors application. The best candidates for this purpose, however, are compounds with stoichiometric vacant A III 2 B VI 3 type sites. A III 2 B VI 3 type compounds are wide-gap semiconductors with stoichiometric vacancies and low concentration of free and localized charged carriers. It has that gate insulators can be constructed from wide-gap semiconductor layers with thicknesses smaller than the Debye Screening distance. These new MS'S (metal-Wide bandgap semiconductor-semiconductor) with a good lattice match have less of interface states thus giving better stability to the structure. The idea was to use these MS'S structures for photovoltaic applications with insignificant number of interface states. During literature survey, it was also found that Ga 2 Se 3 is the most prospective candidate for forming a heterostructure with Silicon because of its various properties. Structurally, perfect and homogeneous in thickness Ga 2 Se 3 layers have already been formed in quasi-closed volume by the Hot Wall technique by B. I. Sysoev in the Voronezh Technological Institute, Russia. However, this technology is not cost-efficient for photovoltaic applications, although it has the advantage of better control of Ga and Se components. Over the last few years, many attempts have been made using many other techniques such as Sol-gel technique, vapour phase epitaxy, molecular beam epitaxy, etc. for preparing the thin film of GaSe. The current work is an attempt to prepare the Ga 2 Se 3 film using the electron beam evaporation technique as it appeared to be much simpler. Film of thicknesses varying from 70 to 1000 Å were grown. The films have been studied for their morphology and properties for future use in photovoltaics and other device fabrication like IR detectors, etc. Various techniques were used to study the behavior of the films like XRD, SEM, and TEM.

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“…The sharp peaks of (111), (220), and (331) are found which index to α-Ga 2 Se 3 phase of zincblende structure JCPDS Card no:05-0724. 26…”

Section: X-ray Diffraction Analysismentioning

confidence: 99%

“…Table 1 shows a comparison between the d values (interplanar spacings) obtained and those recorded in the ASTM card. The sharp peaks of (111), (220), and (331) are found which index to α‐Ga 2 Se 3 phase of zincblende structure JCPDS Card no:05‐0724 26 …”

Section: Characterisationmentioning

confidence: 99%

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

2022

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“…In recent decades, A 2 B 3 -type (A: Ga, In; B: S, Se, Te) metal chalcogenides have drawn considerable interest due to their extensive applications in the field of photovoltaic devices, IR detectors, and nuclear particle detection devices [1][2][3][4]. As an important member of the A 2 B 3 -type semiconductor, gallium sesquiselenide (Ga 2 Se 3 ) crystallizes into a defective zinc-blende structure at ambient conditions, where one-third of the gallium sites in the crystal structure are vacant owing to the difference in the valence between gallium and selenium ions [5].…”

Section: Introductionmentioning

confidence: 99%

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Hong

Dai

et al. 2021

Crystals

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A series of investigations on the structural, vibrational, and electrical transport characterizations for Ga2Se3 were conducted up to 40.2 GPa under different hydrostatic environments by virtue of Raman scattering, electrical conductivity, high-resolution transmission electron microscopy, and atomic force microscopy. Upon compression, Ga2Se3 underwent a phase transformation from the zinc-blende to NaCl-type structure at 10.6 GPa under non-hydrostatic conditions, which was manifested by the disappearance of an A mode and the noticeable discontinuities in the pressure-dependent Raman full width at half maximum (FWHMs) and electrical conductivity. Further increasing the pressure to 18.8 GPa, the semiconductor-to-metal phase transition occurred in Ga2Se3, which was evidenced by the high-pressure variable-temperature electrical conductivity measurements. However, the higher structural transition pressure point of 13.2 GPa was detected for Ga2Se3 under hydrostatic conditions, which was possibly related to the protective influence of the pressure medium. Upon decompression, the phase transformation and metallization were found to be reversible but existed in the large pressure hysteresis effect under different hydrostatic environments. Systematic research on the high-pressure structural and electrical transport properties for Ga2Se3 would be helpful to further explore the crystal structure evolution and electrical transport properties for other A2B3-type compounds.

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“…While the combinations of Ge and Se easily form glasses, the vitreous domain in the Se/Ga or Se/Sb binaries are relatively narrow and occur at very high percentage of Se. Indeed, most of the applications such as photovoltaics based on those binary compounds are generally performed from their crystalline forms Ga2Se3 and Sb2Se3 [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Structure of Ga-Sb-Se glasses by combination of 77Se NMR and neutron diffraction experiments with molecular dynamics

Furet

Lecomte

Coq

et al. 2021

Journal of Non-Crystalline Solids

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Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Cited by 12 publications

References 34 publications

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Structure of Ga-Sb-Se glasses by combination of 77Se NMR and neutron diffraction experiments with molecular dynamics

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Structural and Optical Properties of Ga2Se3 Crystals by Spectroscopic Ellipsometry

Cited by 12 publications

References 34 publications

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

Pressure-Induced Structural Phase Transition and Metallization in Ga2Se3 Up to 40.2 GPa under Non-Hydrostatic and Hydrostatic Environments

Structure of Ga-Sb-Se glasses by combination of 77Se NMR and neutron diffraction experiments with molecular dynamics

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique