Structural and optical properties of ZnTe thin films

Potlog, Tamara; Maticiuc, Natalia; Mirzac, A.; Dumitriu, Petru; Scortescu, D.

doi:10.1109/smicnd.2012.6400772

Cited by 8 publications

(8 citation statements)

References 7 publications

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“…This value is in good agreement with the value reported in literature (2.62-3.24 eV) for vacuum-evaporated films [15]. The absorption coefficient (a) was estimated using the following relation [30]:…”

Section: Optoelectronic Propertiessupporting

confidence: 90%

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Property elucidation of vacuum-evaporated zinc telluride thin film towards optoelectronic devices

2017

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A thermal vacuum evaporation system has been used to deposit zinc telluride (ZnTe) thin film on glass substrate in order to investigate the structural, morphological, optoelectronic and electrical properties of the deposited film. The deposited film has been characterised by X-ray diffraction (XRD), atomic force microscopy (AFM), and UV-VIS-NIR spectrophotometer. The polycrystalline and cubic structure of the sample has been confirmed by XRD. The order parameter(s), which determines the crystallinity and good environmental stability of the sample, has been obtained for the peak (1 1 1) to peak (2 0 0) and is found to be 0.83. The XRD patterns and Bragg's law have been examined to determine the microstructural parameters (lattice parameter, inter-planar spacing, crystallite size, number of crystallites per unit area, strain, dislocation density) of the investigated film. Optical properties (transmittance, absorbance, refractive index, absorption coefficient, extinction coefficient, optical density) of ZnTe thin film were extensively studied in incident photon energy range of 0.5-3.5 eV, where direct optical transition has been obtained with a band gap of 2.63 eV. The surface morphology of the evaporated ZnTe thin film has been checked by AFM.

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Section: Optoelectronic Propertiessupporting

confidence: 90%

“…The emergence of interference fringe in the transmission spectrum confirmed the excellent quality and homogeneity of ZnTe thin film. The transmittance of the film depends on the film thickness; the lower the thickness of the film, the higher the transmittance of the film and vice versa [30].…”

Section: Optoelectronic Propertiesmentioning

confidence: 99%

Property elucidation of vacuum-evaporated zinc telluride thin film towards optoelectronic devices

2017

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“…The obtained parameters were Ψ and Δ in the spectral range 250–1700 nm, scanning with a step of 2 nm. The analysis of the samples was performed at three incidence angles (60°, 65°, and 70°) with a step of 5° as described in references [ 27 , 28 , 29 , 30 ]. A ZnTe semiconductor model was selected according to the reference [ 30 ] for better measurement of bandwidth absorption, which is very important for the design of solar cells [ 29 ].…”

Section: Resultsmentioning

confidence: 99%

“…The analysis of the samples was performed at three incidence angles (60°, 65°, and 70°) with a step of 5° as described in references [ 27 , 28 , 29 , 30 ]. A ZnTe semiconductor model was selected according to the reference [ 30 ] for better measurement of bandwidth absorption, which is very important for the design of solar cells [ 29 ]. These aspects demonstrate the complexity of the thin film structures and influence of n, k parameters for many A2-B6 compounds [ 31 , 32 , 33 , 34 , 35 ].…”

Section: Resultsmentioning

confidence: 99%

Thickness Effect on Some Physical Properties of RF Sputtered ZnTe Thin Films for Potential Photovoltaic Applications

et al. 2021

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Zinc telluride thin films with different thicknesses were grown onto glass substrates by the rf magnetron sputtering technique, using time as a variable growth parameter. All other deposition process parameters were kept constant. The deposited thin films with thickness from 75 to 460 nm were characterized using X-ray diffraction, electron microscopy, atomic force microscopy, ellipsometry, and UV-Vis spectroscopy, to evaluate their structures, surface morphology, topology, and optical properties. It was found out that the deposition time increase leads to a larger growth rate. This determines significant changes on the ZnTe thin film structures and their surface morphology. Characteristic surface metrology parameter values varied, and the surface texture evolved with the thickness increase. Optical bandgap energy values slightly decreased as the thickness increased, while the mean grains radius remained almost constant at ~9 nm, and the surface to volume ratio of the films decreased by two orders of magnitude. This study is the first (to our knowledge) that thoroughly considered the correlation of film thickness with ZnTe structuring and surface morphology characteristic parameters. It adds value to the existing knowledge regarding ZnTe thin film fabrication, for various applications in electronic and optoelectronic devices, including photovoltaics.

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“…The semiconductor is made up of two elements, zinc and tellurium, and their interaction requires high temperatures to form a semiconductor. Numerous techniques were used in preparing this semiconductor, including thermal evaporation, chemical vapor deposition [19], but until recently the chemical bath deposition technique was not often used for the preparation of ZnTe [20,21].…”

Section: Introductionmentioning

confidence: 99%

Preparation of ZnTe thin films using chemical bath deposition technique

2020

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Chemical bath deposition was used to prepare thin films of ZnTe. The density of compounds (0.5-2) ml in 50 ml of distilled water, the precipitation time (10-80 min), and the solution temperature during the precipitation process (15-85 C) have been changed during the preparation of the ZnTe thin films to get the optimal deposition conditions of a semiconductor. The effect of these parameters has been determined by studying the optical properties of the films which included the transmittance and absorbance as a function of the wavelength and energy gap. The energy gap remains constant at about 2.7 eV over all precipitation times for each density of compound. We have also found that the energy gap of the films decreases with increasing solution temperature, reaching approximately 2.9-3eV at 15 C and decreasing to 2.4 eV at 85 C.

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Structural and optical properties of ZnTe thin films

Cited by 8 publications

References 7 publications

Property elucidation of vacuum-evaporated zinc telluride thin film towards optoelectronic devices

Property elucidation of vacuum-evaporated zinc telluride thin film towards optoelectronic devices

Thickness Effect on Some Physical Properties of RF Sputtered ZnTe Thin Films for Potential Photovoltaic Applications

Preparation of ZnTe thin films using chemical bath deposition technique

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