Structural and optical properties of TiO 2 thin film and TiO 2 +2 wt.% ZnFe 2 O 4 composite film prepared by r.f. sputtering

Ultrafast Carrier Trapping of a Metal-Doped Titanium Dioxide Semiconductor Revealed by Femtosecond Transient Absorption Spectroscopy

“…This depends on post-deposition annealing, lattice constants, grain size, morphology, defects including oxygen ones, and annealing temperature. [34][35][36][37][38] Our experimental setup to conduct highly sensitive transient absorption measurements executed by the pump-probe technique is displayed in Figure 3 A similar result was observed for other doped semiconductor materials. 6,16,[24][25][26]40 In these cases, the slow component is also attributed to the carrier trapping in the deeplevel energy states, which can attract electrons from the conduction band or holes from the valence band.…”

Effect of Cobalt Doping on the Phase Transformation of TiO<SUB>2</SUB> Nanoparticles

“…11 12 It has been reported that many metal oxides can be easily formulated in the thin film form by using solgel and dip coating techniques. [13][14][15] [16][17][18][19] The effective photoexcitation of TiO 2 semiconductor particles requires application of light with energy equal to or higher than its band-gap energy (E g ). For anatase the band gap, E g anatase , is 3.2 eV and for rutile, E g rutile , it is 3.02 eV, which correspond to the absorption thresholds of 380 and 410 nm for the two polymorphs of titania, anatase, and rutile, respectively.…”

Influence of the Oxygen Partial Pressure on the Composition and Optical Properties of Electron-beam Evaporated TiOx Films

“…Characteristics of TiO 2 films, such as microstructure, stoichiometry, refractive index, absorption coefficient and scattering loss, are dependent on the deposition method and the details of the conditions such as oxygen partial pressure, substrate temperature, deposition rate, etc. Recently, a variety of techniques has been used for the preparation of TiO 2 films [1][2][3][4]. For instance, Bennett et al [5] and Chen et al [6] have reported that the optical properties of the TiO 2 films deposited by electronbeam evaporation, such as refractive index, extinction coefficient and scattering losses, are strongly process-dependent and are especially sensitive to oxygen partial pressure.…”