Structural and optical characterization of type II In0.14Ga0.86As0.13Sb0.87/GaSb heterostructure doped with zinc grown by liquid phase epitaxy

Dı́az-Reyes, J.; Mendoza-Álvarez, J. G.; Rodríguez-Fragoso, P.; Galván-Arellano, M.; López-Cruz, E.; Herrera-Pérez, J. L.

doi:10.1016/j.vibspec.2013.05.016

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“…Figure 2b shows the deconvolution of two Raman spectra, which present the same bands that only vary in intensity. The vibrational bands observed in these Raman spectra have been discussed widely and published elsewhere [14]. Briefly, the Raman shifts of these vibrational modes in the quaternary alloys are modified with respect to their bulk values due to the effect of the internal stress originated on the difference in lattice constants between GaSb, InAs, and GaAs [15].…”

Section: Resultsmentioning

confidence: 99%