Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Hojabri, Alireza

doi:10.1007/s40094-016-0218-8

Cited by 53 publications

(22 citation statements)

References 24 publications

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“…On the other hand, the observed shifting of the optical band gap as the Zn concentration increased is in good agreement with the results previously reported for ZrO 2 ‐ZnO compounds obtained by different growth techniques or submitted to different annealing treatments, both in bulk or nanostructured films and powders . Thus, the E g values can be tuned in a regulated manner over a wide wavelength range by controlling the Zn atomic incorporation into the ZrO thin film.…”

Section: Resultssupporting

confidence: 91%

Zn_xZr_yO_z thin films grown by DC magnetron sputtering

Sánchez

Hernández‐Vélez

2017

Physica Status Solidi (a)

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The structural and optical properties of thin films deposited by DC reactive magnetron co-sputtering using Zn and Zr targets in argon and oxygen gas mixtures at room temperature are reported. The power applied to the Zr cathode was kept constant, while that applied to the Zn cathode was varied between 0 and 150 W to produce very different Zn x Zr y O z ternary compounds with Zn/Zr atomic ratios in the range of 0.1-10. The composition, crystalline structure, and optical properties of the samples were determined by EDX, XRD, FTIR, and UV-visible spectroscopies. The grown films are polycrystalline, and the preferred crystallographic orientation depends on the Zn atomic concentration in the film. The optical transmission in the UV-visible range is approximately 80% in all cases, and as the Zn atomic content increases, the absorption edge shifts to longer wavelengths. The optical band gap, E g , shifted from 5.5 to 3.5 eV when the Zn/Zr atomic ratio was increased. The results indicate the potential use of these materials in optoelectronic applications.

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Section: Resultssupporting

confidence: 91%

Zn_xZr_yO_z thin films grown by DC magnetron sputtering

Sánchez

Hernández‐Vélez

2017

Physica Status Solidi (a)

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“…• C was calculated from the plot of (αhν) 2 versus photon energy hν, by extrapolating the linear portion to zero absorption coefficient (α = 0) [9,10]. Figure 3 shows the plot of (αhν) 2 versus photon energy hν of the pure TiO 2 and Ni-doped TiO 2 films after annealing at temperature of 300…”

Section: Resultsmentioning

confidence: 99%

Synthesis of Nickel-Doped TiO₂ Thin Films and Their Structural and Optical Properties at Different Annealing Temperatures

2017

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Titanium oxide (TiO2) and nickel-doped TiO2 thin films were deposited onto glass substrates by reactive DC magnetron sputtering technique at different oxygen contents. Then, prepared films were annealed at temperatures of 300 and 500• C. Influence of O2/Ar ratio, nickel doping and annealing temperature on structural, morphological and optical properties of TiO2 thin films were studied and discussed. The XRD analysis results have confirmed the amorphous nature of the films. The results show that increase of annealing temperature and oxygen content in argon-oxygen gas mixture have lead to an increase of films transparency. By doping the TiO2 with nickel the optical band gap energy has slightly decreased. AFM analysis results have shown that the surface morphology of films is effectively influenced by annealing temperature.

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“…These E g values are in good agreement with the values reported in [4,7,8,13] for NiO thin films. The decrease of E g with annealing temperature may be attributed to the increase of crystallite size and decrease of defect sites concentration [13,14]. …”

Section: Resultsmentioning

confidence: 99%

Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures

2017

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In the present investigation, nanocrystalline NiO thin films were prepared by thermal oxidation annealing of DC magnetron sputtered Ni thin films on quartz substrates. The effect of annealing temperature on the films structural, morphological and optical properties was investigated. The XRD analysis shows that all prepared films were of NiO with cubic structure and (200) orientation. The thickness of NiO films was in range of 40-100 nm. The average crystallite size is found to increase from 16 to 36 nm and the optical band gap energy decreases from 3.62 to 3.38 eV by increasing the annealing temperature from 400• C to 600• C. The AFM and SEM results show that the annealing temperature effectively influences the surface morphology of the films.

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Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Cited by 53 publications

References 24 publications

Zn_xZr_yO_z thin films grown by DC magnetron sputtering

Zn_xZr_yO_z thin films grown by DC magnetron sputtering

Synthesis of Nickel-Doped TiO₂ Thin Films and Their Structural and Optical Properties at Different Annealing Temperatures

Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures

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Structural and optical characterization of ZrO2 thin films grown on silicon and quartz substrates

Cited by 53 publications

References 24 publications

ZnxZryOz thin films grown by DC magnetron sputtering

ZnxZryOz thin films grown by DC magnetron sputtering

Synthesis of Nickel-Doped TiO2 Thin Films and Their Structural and Optical Properties at Different Annealing Temperatures

Nanocrystalline Nickel Oxide (NiO) Thin Films Grown on Quartz Substrates: Influence Of Annealing Temperatures

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Product

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Zn_xZr_yO_z thin films grown by DC magnetron sputtering

Zn_xZr_yO_z thin films grown by DC magnetron sputtering

Synthesis of Nickel-Doped TiO₂ Thin Films and Their Structural and Optical Properties at Different Annealing Temperatures