Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Taboada, A. G.; Sanchez, Ana M.; Beltrán, Ana M.; Bozkurt, M Murat; Alonso-Álvarez, D.; Alén, Benito; Rivera, Antonio; Ripalda, J. M.; Llorens, Jorge Cardona; Martín‐Sánchez, Javier; González, Y.; Ulloa, J. M.; Garcı́a, J.M.; Molina, S. I.; Koenraad, P. M.

doi:10.1103/physrevb.82.235316

Cited by 14 publications

(3 citation statements)

References 44 publications

(56 reference statements)

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“…In such a way, the overall shape of the quantum dot, the atomic structure of the wetting layers and dot, and the presence and effect of doping atoms can be studied. The solid that contains the self-assembled quantum dots can be cleaved under ultrahigh-vacuum conditions, enabling cross-sectional microscopy and energy-level spectroscopy (refs , , , , − , − , − , , and − ). Recently, cross-sectional microscopy has been combined with atom probe tomography, which allows one to make detailed cross sections of the atomic structure of the quantum dot combined with tunneling spectroscopy.…”

Section: Colloidal Nanocrystals Of Semiconductor Compounds: Scientifi...mentioning

confidence: 99%

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

2016

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Colloidal semiconductor nanocrystals become increasingly important in materials science and technology, due to their optoelectronic properties that are tunable by size. The measurement and understanding of their energy levels is key to scientific and technological progress. Here we review how the confined electronic orbitals and related energy levels of individual semiconductor quantum dots have been measured by means of scanning tunneling microscopy and spectroscopy. These techniques were originally developed for flat conducting surfaces, but they have been adapted to investigate the atomic and electronic structure of semiconductor quantum dots. We compare the results obtained on colloidal quantum dots with those on comparable solid-state ones. We also compare the results obtained with scanning tunneling spectroscopy with those of optical spectroscopy. The first three sections provide an introduction to colloidal quantum dots, and a theoretical basis to be able to understand tunneling spectroscopy on dots attached to a conducting surface. In sections 4 and 5 , we review the work performed on lead-chalcogenide nanocrystals and on colloidal quantum dots and rods of II-VI compounds, respectively. In section 6 , we deal with colloidal III-V nanocrystals and compare the results with their self-assembled counter parts. In section 7 , we review the work on other types of semiconductor quantum dots, especially on Si and Ge nanocrystals.

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Section: Colloidal Nanocrystals Of Semiconductor Compounds: Scientifi...mentioning

confidence: 99%

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

2016

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“…The In-Ga intermixing, which occurs during the QD decomposition process during the capping, was found to be minimized by the presence of Sb acting as a surfactant. In this section, we investigate the use of elemental Sb before the capping process on the QD properties by means of AFM and PL measurements [71]. The samples were grown by MBE.…”

Section: Sb Soaking Of Inas/gaas Qds Before Cappingmentioning

confidence: 99%

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Bozkurt

Ulloa

Koenraad

2011

Semicond. Sci. Technol.

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The use of Sb during the capping process of quantum dots (QDs) to tune the emission wavelength has been investigated by means of cross-sectional scanning tunneling microscopy (X-STM), photoluminescence (PL) measurements and atomic force microscopy. It is found that a capping layer of GaAsSb reduces InAs/GaAs QD decomposition during capping due to the smaller lattice mismatch with the QD and due to the surfactant effect of Sb. An Sb content of 14% in the GaAsSb layer has been found to be sufficient to eliminate the QD decomposition completely and improve the PL properties. Further increase in the Sb content causes a degradation of the PL properties. Reduction of the QD decomposition has also been achieved by soaking the QDs with Sb before the capping. Furthermore, it is shown that the segregation of In and of Sb in the Ga and the As sublattices respectively are two independent processes. Similar investigations to the use of Sb to tune InAs/InP (311B) QDs are reported. Also in this case, the use of Sb, either in the form of elemental Sb or as a GaAsSb alloy, has resulted in elimination of QD decomposition.

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“…1d) [15]. We excite the QDs within the defect with a CW laser diode (LD) at 785 nm focused with a microscope objective (NA = 0,5).…”

Section: Fabrication Process Of Photonic Crystal Microcavities In Gaasmentioning

confidence: 99%

Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode

Prieto

Herranz

González

et al. 2011

2011 13th International Conference on Transparent Optical Networks

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In this work we show two different procedures of fabrication aiming towards the systematic positioning of single InAs quantum dots (QDs) coupled to a GaAs photonic crystal (PC) microcavity. The two approaches are based on the molecular beam epitaxial (MBE) growth of site-controlled QDs (SCQDs) on pre-patterned structures. The PC microcavity (PCM) is introduced previous or after the growth, on each case. We demonstrate the InAs SCQD nucleation on pre-patterned PCMs and a method to perform the QD nucleation respect to an etched ruler that is used to position the PC structure after growth. For both types of structures, we have carried out microphotoluminescence (μPL) spectroscopy experiments at 80 K and 4 K.

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Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots

Cited by 14 publications

References 44 publications

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

Scanning probe microscopy and spectroscopy of colloidal semiconductor nanocrystals and assembled structures

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Different strategies towards the deterministic coupling of a single Quantum Dot to a photonic crystal cavity mode

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