Structural and optical changes in As2S3 thin films induced by light ion irradiation

Abstract

The influence of H+ and D+ ion irradiation and laser illumination on the optical absorption edge, the refractive index and the Raman scattering spectra of as‐deposited and annealed As2S3 films have been investigated. It was established, that a significant similarity exists between optical changes induced in As2S3 films by light illumination and by irradiation with light ions and also between structural changes thought to be responsible for these effects.The changes are connected with electron excitation processes in both cases and further initiation of atomic rearrangements within the amorphous phase. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

“…Seen in Fig. 6, the two strong bands centered at 335 and 370 cm −1 , which correspond to two symmetric stretching modes of AsS 3/2 pyramids in glasses with lower As content (converge into one mode at~342 cm − 1 for As 40 S 60 composition) [24], confirm that the basic structural unit of studied thin layers is trigonal pyramid AsS 3/2 [32][33][34][35]. The presence of the shoulder at~370 cm −1 can be also attributed to realgar-like structural units of As 4 S 4 possibly present in deeper layers of SCF, but accompanying realgar mode at~191 cm − 1 is not clearly observed, which suggests their low concentration [34,36].…”

“…Bulk As x S 100 − x glasses (x = 30,35,40) prepared by the standard melt quench technique were used as the starting material for fabricating SCF. The bulk glasses were prepared starting with high purity (5 N) elemental powders forming approximately 10 g batch, which was loaded into quartz ampoules and vacuum sealed.…”

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

“…As the external stimuli, which produce noticeable structural rearrangement in the irradiated volume, the photon, γ , electron (e-beam) or ion irradiation are widely used [4][5][6][7]. During and after irradiation, mechanical, optical, rheological and other physical and chemical properties of ChG undergo alterations.…”

High‐contrast 2D etched holes array obtained by direct laser writing on chalcogenide As2S3 films

“…Other authors identify that the structure of As 2 S 3 thin films consists of As 4 S 4 molecules and S 2 , the sulfur in films can configure in the S 8 ring molecules. Similar photoinduced optical transmission takes place under the irradiation with high‐energy ions 23.…”