2004
DOI: 10.1016/j.jmmm.2003.10.019
|View full text |Cite
|
Sign up to set email alerts
|

Structural and magnetic properties of Ni81Fe19/Zr multilayers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
5
0

Year Published

2007
2007
2021
2021

Publication Types

Select...
5
1

Relationship

1
5

Authors

Journals

citations
Cited by 11 publications
(5 citation statements)
references
References 24 publications
0
5
0
Order By: Relevance
“…The values of M 0 and δ are found to be equal to 850 emu/cm 3 (1μ B ) and 9.5 Å, respectively, for all multilayer films [10].…”
Section: Resultsmentioning
confidence: 80%
See 2 more Smart Citations
“…The values of M 0 and δ are found to be equal to 850 emu/cm 3 (1μ B ) and 9.5 Å, respectively, for all multilayer films [10].…”
Section: Resultsmentioning
confidence: 80%
“…The coercivity first increases slightly from 20 to 26 Oe when t NiFe decreases from 120 to 80 Å, then decreases strongly to 5 Oe when t NiFe decreases to 20 Å, at 300 K. This decrease could be attributed to the change in the microstructure. The change of the coercive field is comparable to that resulting from the structural transition of the NiFe sublayers between the amorphous or nanocrystalline and polycrystalline states (see [10]). An additional contribution to the coercivity behavior could result from the interlayer exchange coupling of the NiFe sublayers across the Zr spacers.…”
Section: Resultsmentioning
confidence: 83%
See 1 more Smart Citation
“…In this work only the effect of the exchange interactions on the SWR modes of FePt thin films was considered, and both even and odd values were assigned to the spin-wave mode number n. The presence of even and odd SWR modes implies an inhomogeneous distribution of magnetization perpendicular to film plane, and an asymmetrical spin pinning (pinned or unpinned) at the surface and interface of the film [21,22]. It is important to note that the n ¼ 0 uniform mode can be excited in a film by the microwave field only when the magnetization is homogeneous and unpinned at both surface and interface of the film [23].…”
Section: Article In Pressmentioning
confidence: 99%
“…Given the above context, ferromagnetic/anti-ferromagnetic (FM/AF) thin films with a multilayer structure are considered as ideal candidates. The higher saturation magnetization (M s ), permeability (µ), and self-biased ferromagnetic resonance (FMR) frequency of the magnetic thin film make them suitable for high-frequency applications as nanostructured magnetic media and magnetic sensors [7][8][9][10][11][12][13]. Meanwhile, the multilayer structure has been widely used in giant magnetoresistance spin valves based on the exchange bias phenomenon.…”
Section: Introductionmentioning
confidence: 99%