Structural and magnetic properties of Mn-implanted Si

Zhou, Shengqiang; Potzger, К.; Zhang, Gufei; Mücklich, A.; Eichhorn, F.; Schell, Norbert; Grötzschel, R.; Schmidt, Bertram; Skorupa, W.; Helm, M.; Faßbender, J.; Geiger, Diana

doi:10.1103/physrevb.75.085203

“…2,3, 12,13,16 In that respect, a detailed study of the lattice sites occupied by implanted Mn in the phase-pure regime (dilute, randomly distributed Mn) should clarify whether this is indeed the case. We have addressed these questions by applying the electron emission channeling technique (EC) from implanted radioactive 56 Mn probes to different doping types of Si single crystals.…”

Section: Introductionmentioning

confidence: 99%

Direct observation of the lattice sites of implanted manganese in silicon

Silva

¹

,

Wahl

²

,

Correia

³

et al. 2016

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Mn-doped Si has attracted significant interest in the context of dilute magnetic semiconductors. We investigated the lattice location of implanted Mn in silicon of different doping types (n, n + and p + ) in the highly dilute regime. Three different lattice sites were identified by means of emission channeling experiments: ideal substitutional sites; sites displaced from bond-centered towards substitutional sites and sites displaced from anti-bonding towards tetrahedral interstitial sites. For all doping types investigated, the substitutional fraction remained below ∼ 30%. We discuss the origin of the observed lattice sites as well as the implications of such structures on the understanding of Mn-doped Si systems.

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“…Ferromagnetic ordering in silicon implanted with Mn + ions (Si:Mn) has been reported recently; this ordering is evidently related to the structure of Mn-enriched near-surface layer in the implanted material [8]. It has been found that, for Si:Mn produced by implantation with Mn + doses, D = 10 15 -10 16 cm -2 , at energy, E = 300 keV, Curie temperature exceeds 400 K after rapid thermal annealing at 1070 K. Ferromagnetic properties of Si:Mn have been attributed to formation of MnSi 1.7 [9]. As it has been stated earlier [10,11], not only temperature but also enhanced hydrostatic pressure of ambient (HP) at processing of Si:Mn affect its structural and magnetic properties.…”

Section: Introductionmentioning

confidence: 91%

Structure of Magnetically Ordered Si:Mn

Bąk‐Misiuk¹,

Dynowska²,

Romanowski³

et al. 2007

Solid State Phenomena

0

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Abstract. The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn + ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si 1-x Mn x precipitates in the implantationdisturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation -disturbed layer and in formation of Mn 4 Si 7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.

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“…Ferromagnetic ordering in silicon implanted with Mn + ions (Si:Mn) has been reported recently; this ordering is evidently related to the structure of Mn-enriched near-surface layer in the implanted material [8]. It has been found that, for Si:Mn produced by implantation with Mn , at energy, E = 300 keV, Curie temperature exceeds 400 K after rapid thermal annealing at 1070 K. Ferromagnetic properties of Si:Mn have been attributed to formation of MnSi 1.7 [9]. As it has been stated earlier [10,11], not only temperature but also enhanced hydrostatic pressure of ambient (HP) at processing of Si:Mn affect its structural and magnetic properties.…”

Section: Introductionmentioning

confidence: 99%

Structure of Magnetically Ordered Si:Mn

Bąk‐Misiuk

¹

,

Dynowska

²

,

Romanowski

³

et al. 2007

SSP

1

0

View full text Add to dashboard Cite

Abstract. The structure studies of single crystalline silicon implanted at 340 K or 610 K with Mn + ions (Si:Mn) and subsequently processed under atmospheric and enhanced hydrostatic pressure at up to 1270 K are reported. The defect structure was determined by an analysis of X-ray diffuse scattering around the 004 reciprocal lattice point and by electron microscopy. High resolution X-ray diffraction techniques based on the conventional source of radiation were used for this purpose. The crystal structure of Si:Mn and the Si 1-x Mn x precipitates in the implantationdisturbed layer were studied by synchrotron radiation diffraction in the grazing incidence geometry. Processing of Si:Mn results in crystallization of amorphous Si within the buried implantation -disturbed layer and in formation of Mn 4 Si 7 precipitates. Structural changes are dependent both on temperature of the Si substrate at implantation and on processing parameters.

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Structural and magnetic properties of Mn-implanted Si

Cited by 135 publications

References 28 publications

Direct observation of the lattice sites of implanted manganese in silicon

Direct observation of the lattice sites of implanted manganese in silicon

Structure of Magnetically Ordered Si:Mn

Structure of Magnetically Ordered Si:Mn

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