2014
DOI: 10.1007/s10812-014-9856-2
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Structural and Luminescent Properties of Sn-Doped SiO2 Layers

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Cited by 5 publications
(3 citation statements)
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“…The limit of the solid solution of Sn in SiO2 reported by Komarov et al is 4 wt%. 17 The solid solubility limit of Sn in SiO2 exceeds on adding 5 wt% Sn, and the undissolved Sn exists as a simple substance. This charge-discharge reaction between excess Sn and Na + proceeds to locally generate the stress due to volume expansion.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The limit of the solid solution of Sn in SiO2 reported by Komarov et al is 4 wt%. 17 The solid solubility limit of Sn in SiO2 exceeds on adding 5 wt% Sn, and the undissolved Sn exists as a simple substance. This charge-discharge reaction between excess Sn and Na + proceeds to locally generate the stress due to volume expansion.…”
Section: Resultsmentioning
confidence: 99%
“…Hence, the discharge capacity fails to improve. In contrast, Sn is not entirely dissolved in the solid solution and exists as a simple substance 17 in the 1 wt% Sn-doped SiOx electrode. Thus, the charge-discharge reaction between Sn and Na + proceeds, and the active material is possibly pulverized owing to the large volume expansion of Sn, resulting in a low discharge capacity.…”
Section: Resultsmentioning
confidence: 99%
“…dopants [9]. For instance, Kachurin et al [10] observed a new optical active centre in SiO 2 implanted by Ge ions during thermal treatment, while Komarov et al [11] showed that the implantation of Sn ions in SiO 2 formed a large number of radiative centres after heat treatment.…”
Section: Introductionmentioning
confidence: 99%