Structural and impedance spectroscopy of α-Mn2O3

Chandra, Mohit; Yadav, Satish; Rayaprol, Sudhindra; Singh, Kiran

doi:10.1063/1.5029006

Cited by 5 publications

(7 citation statements)

References 8 publications

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“…Room temperature synchrotron based x-ray diffraction. The RT laboratory based XRD and neutron powder diffraction (NPD) of the prepared samples are reported earlier [38] and confirm the phase purity of the prepared samples. It is however rather difficult to state conclusively on the exact crystal symmetry from those results.…”

Section: Resultssupporting

confidence: 68%

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Multiferroicity and magnetoelastic coupling in α−Mn2O3 : A binary perovskite

et al. 2018

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Multiferroics where at least two primary ferroic orders are present and coupled in a single system constitute an important class of materials. They attracted special consideration as they present both intriguing fundamental physics problems and technological importance for potential multifunctional devices. Here, we present the evidence of multiferroicity and magnetoelectric (ME) coupling in -Mn2O3; a unique binary perovskite. Corresponding to the antiferromagnetic (AFM) ordering around 80K, a clear frequency independent transition is observed in the dielectric permittivity. We showed that electric polarization emerges near AFM regime that can be modulated with magnetic field. The detailed structural analysis using synchrotron radiation X-ray diffraction demonstrates the increase in structural distortion with decreasing temperature, as well as changes in the unit cell parameters and bond lengths across the ferroelectric and magnetic ordering temperatures. This observation of multiferroicity and magnetoelastic coupling in -Mn2O3 provides insights for the exploration of ME coupling in related materials.

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Section: Resultssupporting

confidence: 68%

“…The polycrystalline samples of -Mn2O3 were prepared through standard solid state reaction method using MnO2 (99.99%) as reported earlier [38]. The temperature dependent…”

Section: Methodsmentioning

confidence: 99%

Multiferroicity and magnetoelastic coupling in α−Mn2O3 : A binary perovskite

et al. 2018

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“…In the case of MIM Al/Al 2 O 3 /Mn 2 O 3 /ITO device, the Li–Al 2 O 3 /Mn 2 O 3 bilayer capacitor acts as series combination of two parallel plate capacitors. So the effective capacitance is defined as Mn 2 O 3 has a high intrinsic dielectric constant (>2500 below 1 kHz), which is much higher than that of Li–Al 2 O 3 . Therefore, by including the Mn 2 O 3 interface layer, the overall capacitance value increases in a lower frequency range .…”

Section: Resultsmentioning

confidence: 99%

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn₂O₃ Gate Interface

Pal

Sharma

Acharya

et al. 2019

ACS Appl. Electron. Mater.

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A solution-processed high-performance subvolt (<1 V) tin oxide (SnO2) thin film transistor (TFT) has been fabricated onto an ion-conducting Li–Al2O3 gate dielectric by utilizing a high-permittivity Mn2O3 gate interface. A comparative device characterization of two different TFTs with and without a Mn2O3 gate interface with an ionic dielectric ensures that n-type Mn2O3 induces an additional electron to the semiconductor/dielectric interface trap states. Consequently, the TFT with a Mn2O3 interface achieves a lower subthreshold swing (SS) by keeping the threshold voltage closer to zero compared to the TFT without the Mn2O3 gate interface. This SnO2 TFT with Mn2O3 interface requires only 0.6 V to saturate the drain current, and device performance under such low-voltage (0.6 V) operation exhibits an electron mobility of 17 cm2/V·s with on/off ratio of 3.3 × 104 and subthreshold swing of 124 mV/dec. This work provides a potential approach to achieve a high-performance low-voltage TFT by selecting a suitable combination of dielectric materials.

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“…Being calculated according to expression (12), the maximum thickness of the inversion layer in the -CdZnTe contact region is equal to = 0.4 m. At reverse voltages across the -Mn 2 O 3 / -CdZnTe heterostructure, the charge density in the inversion layer increases, and the external electric field does not penetrate into it. The further broadening of the inverse region is so insignificant, that it weakly affects the capacitance in the -plots in the voltage interval −2 V < < 0 V (Fig.…”

Section: Results and Their Discussionmentioning

confidence: 99%

“…For the manufacture of thin -Mn 2 O 3 films, the spray pyrolysis [8,10] and hydrothermal [11] methods, the method of solid-state reactions in MnO 2 at its heat treatment [12], electrodeposition [13], and the sol-gel method [14] are applied. The advantages of the spray pyrolysis method among the others include a simple equipment and the convenient correction of the -Mn 2 O 3 film deposition mode to obtain the desired physical properties.…”

Section: Introductionmentioning

confidence: 99%

Електричні властивості і енергетичні параметри фото-чутливих гетероструктур n-Mn2O3/n-CdZnTe

Оrletskyi¹,

Ілащук²,

Майструк³

et al. 2021

Ukr. J. Phys.

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Дослiджено умови виготовлення фотодiодних iзотипних гетероструктур n-Mn2O3/n-CdZnTe методом спрей-пiролiзу тонких плiвок бiксбiту a-Mn2O3 на кристалiчнi пiд-кладинки n-CdZnTe. За температурними залежностями I-V -характеристик проаналiзовано механiзми тунелювання електронiв крiзь енергетичний бар’єр гетеропереходу при прямому та зворотному струмах. З’ясована роль енергетичних станiв на межi n-Mn2O3/n-CdZnTe у формуваннi параметрiв бар’єра. На основi C-V –характеристик встановлено динамiку змiни i взаємозв’язок ємнiсних параметрiв тонкої плiвки n-Mn2O3 та iнверсiйного шару n-CdZnTe. Представлено модель енергетичної дiаграми гетеропереходу n-Mn2O3/n-CdZnTe. Проаналiзовано фотоелектричнi властивостi гетероструктури.

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Structural and impedance spectroscopy of α-Mn2O3

Cited by 5 publications

References 8 publications

Multiferroicity and magnetoelastic coupling in α−Mn2O3 : A binary perovskite

Multiferroicity and magnetoelastic coupling in α−Mn2O3 : A binary perovskite

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn₂O₃ Gate Interface

Електричні властивості і енергетичні параметри фото-чутливих гетероструктур n-Mn2O3/n-CdZnTe

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Structural and impedance spectroscopy of α-Mn2O3

Cited by 5 publications

References 8 publications

Multiferroicity and magnetoelastic coupling in α−Mn2O3 : A binary perovskite

Multiferroicity and magnetoelastic coupling in α−Mn2O3 : A binary perovskite

Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn2O3 Gate Interface

Електричні властивості і енергетичні параметри фото-чутливих гетероструктур n-Mn2O3/n-CdZnTe

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Gate Interface Engineering for Subvolt Metal Oxide Transistor Fabrication by Using Ion-Conducting Dielectric with Mn₂O₃ Gate Interface