Structural and electronic properties of two-dimensional stanene and graphene heterostructure

Wu, Liyuan; Lu, Pengfei; Bi, Jingyun; Yang, Chuanghua; Song, Yuxin; Guan, Ping; Wang, Shumin

doi:10.1186/s11671-016-1731-z

Cited by 47 publications

(17 citation statements)

References 64 publications

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“…Zhu et al . reported the successful fabrication of 2D stanene by molecular beam epitaxy (MBE), which has prompted the development of related research, e.g ., heterostructures of stanene and hydrogenated stanene (namely stanane) 10 , 11 .…”

Section: Introductionmentioning

confidence: 99%

Quasiparticle and optical properties of strained stanene and stanane

Yang

et al. 2017

Sci Rep

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Quasiparticle band structures and optical properties of two dimensional stanene and stanane (fully hydrogenated stanene) are studied by the GW and GW plus Bethe–Salpeter equation (GW-BSE) approaches, with inclusion of the spin-orbit coupling (SOC). The SOC effect is significant for the electronic and optical properties in both stanene and stanane, compared with their group IV-enes and IV-anes counterparts. Stanene is a semiconductor with a quasiparticle band gap of 0.10 eV. Stanane has a sizable band gap of 1.63 eV and strongly binding exciton with binding energy of 0.10 eV. Under strain, the quasiparticle band gap and optical spectrum of both stanene and stanane are tunable.

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Section: Introductionmentioning

confidence: 99%

Quasiparticle and optical properties of strained stanene and stanane

Yang

et al. 2017

Sci Rep

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“…[ 215,216 ] Some recent theoretical studies on stanene monolayers by the various metal (In, Sb, and In‐Sb), [ 217 ] metal ions (Li, Na, K, Mg, and Ca), [ 218 ] organic(methyl, [ 219 ] ethynyl, [ 220 ] ethynyl, [ 221 ] NH, OH, [ 222 ] F [ 223 ] ), and gas molecules [ 224 ] have shown the superiority in sensing device and catalysis applications. Similarly, stanene‐based heterostructures with graphene, [ 225,226 ] MoS 2 , [ 227 ] and so on, is stable with no distortion on the structure. They exhibits several advantages such as good mechanical stability, demonstrating a potentially impressive application worth.…”

Section: Selected Properties Of Xenes For Electrochemical Applicationmentioning

confidence: 99%

Xenes as an Emerging 2D Monoelemental Family: Fundamental Electrochemistry and Energy Applications

Wang

Kou

et al. 2020

Adv Funct Materials

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As an emerging subclass of 2D materials, Xenes (e.g., borophene, silicene, germanene, stanene, phosphorene, arsenene, antimonene, and bismuthene) consist of one single element and have opened the door for various important applications. Benefiting from their impressive characteristics, including ultrathin folded structure, ultrahigh surface–volume ratio, excellent mechanical strength and flexibility, Xenes are considered as promising electrode materials in the field of electrochemical energy with large capacity, high rate, and high safety. This review provides a comprehensive summary of selected properties, synthetic challenges, and the latest theoretical and experimental advances in the energy‐related applications of Xenes, including Li/Na ion batteries, Li–S batteries, electrocatalysis, and supercapacitors. Finally, the challenges and outlook of this emerging field are discussed.

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“…Meanwhile an indirect band gap of 7.4 meV opens around Г point with a band inversion, as shown in enlarged inset of Figure a. The conduction band and valence band curves upwards and downwards near the K point respectively, forming the so‐called “Mexican‐hat shape,” which is analogous to the band structure of bilayer graphene with an applied perpendicular field . Experimental and theoretical studies have demonstrated that the perpendicular electric field can create the band inversion and a continuously tunable bandgap can be realized through changing the strength of the perpendicular field.…”

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confidence: 95%

Electronic and Interface Properties in Graphene Oxide/Hydrogen‐Passivated Ge Heterostructure

Wang

et al. 2018

Physica Rapid Research Ltrs

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Graphene oxide/H‐Ge (111) van der Waals (vdW) heterostructure is investigated by using first‐principle methods. An oxygen carbon ratio of 1:6 is applied to form a graphene oxide (GO) layer. A band inversion induced by built‐in electric field is observed, and a 7.4 meV indirect gap has been opened around the Dirac cone in GO layer. Being adsorbed on hydrogen‐passivated Ge surface, the band inversion occurs again around Fermi energy. Two‐dimensional electronic gas is confirmed with a 0.27 eV potential well appearing at the H layer. The charge transfer mechanism is revealed in order to illustrate band inversion and the electron accumulation on the Ge surface. Our calculation results provide insight into the electronic properties of GO and exhibit possible application of GO/H‐Ge (1111) heterostructure on the emerging electronic devices.

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Structural and electronic properties of two-dimensional stanene and graphene heterostructure

Cited by 47 publications

References 64 publications

Quasiparticle and optical properties of strained stanene and stanane

Quasiparticle and optical properties of strained stanene and stanane

Xenes as an Emerging 2D Monoelemental Family: Fundamental Electrochemistry and Energy Applications

Electronic and Interface Properties in Graphene Oxide/Hydrogen‐Passivated Ge Heterostructure

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