Structural and electronic properties of GaAsBi

Achour, H.; Louhibi, Samira; Amrani, B.; Tebboune, A.; Sekkal, Nadir

doi:10.1016/j.spmi.2008.05.004

Cited by 24 publications

(7 citation statements)

References 13 publications

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“…The ω-2θ X-ray diffraction (XRD) measurements throughout this work were taken on a Bruker D8 Discover XRD machine using Cu kα 1 radiation and the measured diffraction patterns were modelled using RADS Mercury software assuming a GaBi lattice constant of 6.28 Å [11].…”

Section: Methodsmentioning

confidence: 99%

MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

Richards

Bastiman

Roberts

et al. 2015

Journal of Crystal Growth

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a b s t r a c tA series of GaAsBi/GaAs multiple quantum well p-i-n diodes were grown by molecular beam epitaxy. Nomarski images showed evidence of sub-surface damage in each diode, with an increase in the crosshatching associated with strain relaxation for the diodes containing more than 40 quantum wells. X-ray diffraction ω-2θ scans of the (004) reflections showed that multiple quantum well regions with clearly defined well periodicities were grown. The superlattice peaks of the diodes containing more than 40 wells were much broader than those of the other diodes. The photoluminescence spectra showed a redshift of 56 meV and an attenuation of nearly two orders of magnitude for the 54 and 63 well diodes. Calculations of the quantum confinement and strain induced band gap modifications suggest that the wells in all diodes are thinner than their intended widths and that both loss of quantum confinement and strain probably contributed to the observed redshift and attenuation in the 54 and 63 well diodes. Comparison of this data with that gathered for InGaAs/GaAs multiple quantum wells, suggests that the onset of relaxation occurs at a similar average strain-thickness product for both systems. Given the rapid band gap reduction of GaAsBi with Bi incorporation, this data suggests that GaAsBi is a promising photovoltaic material candidate.

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Section: Methodsmentioning

confidence: 99%

MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

Richards

Bastiman

Roberts

et al. 2015

Journal of Crystal Growth

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“…Achour et al [86] have investigated structural and electronic properties of GaAs 1−x Bi x alloys and (GaAs) m /(GaBi) n superlattices (SLs) using full potential linear augmented plane wave (FPLAPW) method as implemented in the LmtART code and the full potential linear muffin-tin orbital (FPLMTO) method as implemented in the WIEN97 code. In both cases, they are possibly semiconductors when the proportion of GaBi is no more than that of GaAs and the semi-metallic property appears if the proportion of GaAs is lower.…”

Section: Nanostructuresmentioning

confidence: 99%

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

Wang

Zhang

et al. 2017

Crystals

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Abstract:Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.

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“…Regarding the DFT calculations, it is well known that it is a very powerful tool when studying the band structure of semiconductor alloys including HMAs [24]. So far this approach has been applied several times to study III-V-Bi alloys by other authors [25][26][27] but the issue of Bi-induced changes in the CB and VB as well as the issue of band offsets between III-V host and III-V-Bi alloys have not been systematically analyzed. This paper addresses these issues in a consistent and systematic way.…”

Section: Introductionmentioning

confidence: 99%

First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

Polak

Scharoch

Kudrawiec

2015

Semicond. Sci. Technol.

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Bi-induced changes in the band structure of Ga-V-Bi and In-V-Bi alloys are calculated within the density functional theory (DFT) for alloys with Bi ⩽3.7% and the observed chemical trends are discussed in the context of the virtual crystal approximation (VCA) and the valence band anticrossing (VBAC) model. It is clearly shown that the incorporation of Bi atoms into III-V host modifies both the conduction band (CB) and the valence band (VB). The obtained shifts of bands in GaP 1−x

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Structural and electronic properties of GaAsBi

Cited by 24 publications

References 13 publications

MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

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