Structural and electronic properties of highly photoconductive amorphous carbon nitride

Optical properties of amorphous carbon nitride films with high nitrogen content

“…We also confirmed bonding states of nitrogen and carbon using spectroscopic analysis such as infrared absorption, Raman, electron spin density (ESR) and electron energy-loss spectroscopy (EELS) [3,15]. The optical gap of the films was determined using optical transmittance spectra and the optical absorption spectra below the gap were measured by PDS.…”

“…The formation of carbon nitride, however, is more difficult than the formation of silicon nitride. Ever since Lie and Cohen reported, using theoretical calculations, that carbon nitride can show stability [1], many groups have attempted preparation of crystalline C 3 N 4 using chemical vapor deposition, sputtering and arc ion plating [2][3][4][5][6][7][8][9]. The samples obtained in their studies were almost always amorphous carbon nitride (a-CN x ).…”

Preparation and properties of amorphous carbon oxynitrides a-CNxOy films made by a nitrogen radical sputter method and by the layer-by-layer method

“…Total content of nitrogen and oxygen x+y in a-CNxOy is about 1, which is larger than maximum value of x=0.86 for a-CN, made by a nitrogen radical sputter method at present [3]. This result is a very attractive point of ORT, especially to get lower dielectric constant materials [4][5][6].…”

“…The amorphous phase of carbon nitride (a-CN,) made by a nitrogen radical sputter method shows high photosensitivity and high resistively [1][2][3]. A-CN× has attractive properties as a low dielectric constant material for ultra large-scale integration ULSI [4][5][6].…”

Effects of Ion Bombarding and Nitrogenation on the Properties of Photovoltaic a-CNx Thin Films

“…Actually, the carbon nitride films with amorphous structure might be a rather promising novel electronic material considering its electrical, optical properties can be controlled by changing the concentration of nitrogen atoms in the thin films or by choosing different deposition processes [3,4]. This new material possesses some peculiar properties, such as negative electron affinity, low dielectric constant and high photoconductive gain, so it could be used on field emitting displays, interlayer of integration circuits and photovoltaic devices [5][6][7]. The synthesis of carbon nitride films can be achieved with variety techniques, such as plasma enhanced CVD [8,9], unbalanced magnetron sputtering [10], ion-beam deposition [11], laser ablation and FCVA [12,13].…”