Optical properties of amorphous carbon nitride films with high nitrogen content

Probing the band structure of hydrogen-free amorphous carbon and the effect of nitrogen incorporation

“…[25] The optical bandgap of such a-CN x films is almost 3 eV, which implies that reduction of the π and π* bands, and possible new peaks originate from the nitrogen lone pair and the Graphitic C-N bonds. In such band structured films, a higher effective mobility is expected.…”

“…The applied electric fields between source and drain are with relatively low electric field region, and therefore the conduction mechanism was attributed to conduction through localized states (via hopping), much like those found in conjugated polymers. [23][24][25] It was also reported that both the a-C and a-CN x thin film transistor (TFT) show p-type conduction through a band close to the edge of the extended states (σ band)…”

Structural, electrical, and optical properties of amorphous carbon nitride films prepared using a hybrid deposition technique

“…6 shows the optical band gap E o of the HDT films as a function of GFR. One notable result is that the E o values were much lower than those of various sputtered a-CN x films [15,[41][42][43][44][45], as shown in Fig. 7.…”

“…Optical band gap of various amorphous carbon nitride films as a function of the nitrogen content N/C. The preparation methods: hybrid deposition technique using graphite and a mixture gas of N 2 and Ar, DC magnetron sputtering of graphite and a mixture gas of N 2 and Ar [41], DC magnetron sputtering of graphite and pure N 2 [42], RF magnetron sputtering using graphite and a mixture gas of N 2 and Ar [43], and RF magnetron sputtering of graphite and N 2 gas [15,44,45]. spectra of the films.…”

Microstructure and mechanical properties of a-CN films prepared by bias voltage assisted PLD with carbon nitride target

“…Moreover, the mechanical properties of the films fluctuate in a large scale [10][11][12][13] and the thermal stability is poor due to its low decomposition temperature [14][15][16]. Nowadays, it is a tremendous challenge to fabricate a crystalline film that exhibits super-high hardness in order to check the correctness of the theoretical prediction with of course tremendous application potential, though a few CN x films of high nitrogen concentration up to~50 at.% (or N/C ratio~1.0) have been synthesized by chemical vapor deposition (CVD) [17,18], electrodeposition [19], magnetron sputtering (MS) [20] and pulsed laser deposition (PLD) [21][22][23], etc. The optimal condition for the crystallization of carbon nitride is still to be found.…”