Structural and electronic properties of the Bi/GaP(110) interface

Prietsch, M.; Samsavar, A.; Ludeke, R.

doi:10.1103/physrevb.43.11850

Cited by 88 publications

(36 citation statements)

References 19 publications

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“…21 Here, ͑dI / dV͒ / ͑I / V͒ was numerically calculated by adding a small constant to the I / V values to overcome the problem due to divergence at the band edges. 22,23 The averaged ͑dI / dV͒ / ͑I / V͒ versus V curves for the clean region and cluster are represented in Fig. 3 by a solid and dash-dotted lines, respectively.…”

Section: Resultsmentioning

confidence: 99%

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Zilani

Liu

et al. 2006

Phys. Rev. B

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The electronic structure of cobalt-induced magic clusters grown on Si͑111͒-͑7 ϫ 7͒ is investigated by scanning tunneling microscopy, scanning tunneling spectroscopy, and real-space multiple-scattering calculations. Topographical images of a half unit cell of Si͑111͒-͑7 ϫ 7͒ with the cluster acquired at low bias voltages of ±0.4 V show greatly reduced cluster heights; however, the heights of the corner adatoms are unchanged, indicative of the highly localized nature of the charge distribution. Spectroscopic studies of the clusters indicate a band gap of ϳ0.8 eV, suggesting localized nonmetallic behavior. The opening of such a band gap is suggested to be a stabilizing factor for the observed magic clusters. A 65-atom Co-Si cluster is constructed to calculate the momentum-and element-projected density of states. The calculated result identifies that the intense state below the Fermi level at −1.75 V in the experimental spectroscopic curve is primarily due to localized 3d orbitals of Co atoms in the magic clusters.

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Section: Resultsmentioning

confidence: 99%

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Zilani

Liu

et al. 2006

Phys. Rev. B

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“…Noise near the Fermi level was suppressed by a procedure from Ref. 16. A precise position of the STS measurement was marked in the corresponding STM image.…”

Section: Methodsmentioning

confidence: 99%

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2×1

et al. 2013

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Structure and electronic properties of one-dimensional bimetallic In-Sn chains formed by codeposition on a Si(100)-2×1 surface are studied experimentally by means of scanning tunneling microscopy (STM) and scanning tunneling spectroscopy and theoretically using density-functional theory. The codeposition of In with a small amount of Sn allows separation of various In-Sn structures and their identification in empty-state STM images. A 16 × 2 supercell is employed to model an indium atomic chain in which one or two Sn atoms are embedded. This atomic model is used to identify unambiguously various In-Sn structures observed experimentally. At low Sn:In ratio the codeposition results in strongly preferential formation of isolated heterogeneous In-Sn dimers. The In-Sn dimer induces tilting of the neighboring homogeneous In-In dimer accompanied with a charge transfer. Consequently a localized state at Fermi level appears. These results contribute to a discussion on possible transport of electric charge along one-dimensional atomic chains of metals.

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“…For the STS spectrum, the normalized conductance (dI/dV )/(I/V ) could be adopted, however, a divergence of intensity due to a negligible tunneling current in the energy gap region would be expected. Therefore we have modified the conductance using a corrected I/V denoted as I/V = (I/V ) 2 + 0.02, which was originally introduced by Prietsch, et al [24].…”

Section: Methodsmentioning

confidence: 99%

Site-resolved electronic structure of Al nanocluster fabricated on Si(111)7 × 7 surface

Narita

Kakeya

Kimura

et al. 2006

e-J. Surf. Sci. Nanotech.

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We have done scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) as well as current imaging tunneling spectroscopy (CITS) of an Al nanocluster periodic array of a submonolayer-Al/Si(111) system. To understand the formation mechanism of this system in detail, a phase diagram of the Al/Si(111) has been carefully produced. Among several structural phases, the nanocluster phase appears for the deposition thickness of 0.24-0.5 ML at a substrate temperature of 550• C. It has been confirmed that these growth conditions should be carefully chosen to produce the well-defined nanocluster. The site-resolved STS spectra of Al nanocluster at 78 K show an insulating energy gap of 3.3 eV. In the CITS images, we have found different features of space-resolved tunneling current for the filled and empty states, which markedly depend on atomic sites and also on inequivalent half-unit cells.

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Structural and electronic properties of the Bi/GaP(110) interface

Cited by 88 publications

References 19 publications

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2×1

Site-resolved electronic structure of Al nanocluster fabricated on Si(111)7 × 7 surface

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Structural and electronic properties of the Bi/GaP(110) interface

Cited by 88 publications

References 19 publications

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Emergence of state at Fermi level due to the formation of In-Sn heterodimers on Si(100)-2×1

Site-resolved electronic structure of Al nanocluster fabricated on Si(111)7 &times; 7 surface

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Site-resolved electronic structure of Al nanocluster fabricated on Si(111)7 × 7 surface