Electronic structure of Co-induced magic clusters grown on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>(</mml:mo><mml:mn>111</mml:mn><mml:mo>)</mml:mo><mml:mtext>−</mml:mtext><mml:mo>(</mml:mo><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:math>: Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Zilani, M.A.K.; Xu, Hongwei; Liu, T.; Sun, Yao; Feng, Yuan Ping; Wang, Xuesen; Wee, Andrew Thye Shen

doi:10.1103/physrevb.73.195415

Cited by 23 publications

(6 citation statements)

References 26 publications

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“…[1][2][3][4] In the past decade, self-assembled ordered metal nanoclusters with identical sizes have been successfully fabricated on Si͑111͒-͑7 ϫ 7͒ superlattice at the elevated substrate temperature. [5][6][7][8][9][10][11][12][13][14] The atomic structures and formation mechanism of these nanoclusters are the key concerns. Despite considerable efforts, many earlier works [15][16][17][18] could only assume the atomic structures of these clusters ambiguously due to the poor elemental specificity of scanning tunneling microscopy ͑STM͒.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, by combining the STM image analysis and the theoretical simulation, the atomic structures have been determined for a number of clusters with elements such as univalent group I A metal ͑Na͒, 19,20 trivalent group III A metals ͑Al, Ga, and In͒, 5-9 tetravalent group IV A metal ͑Pb͒, 10 and 3d ferromagnetic group VIII metals ͑Co and Fe͒. [11][12][13] It has been found that metals in the same group tend to form a similar cluster structure and vice versa. In other words, the atomic structure of the nanocluster has a characteristic of the varying valence.…”

Section: Introductionmentioning

confidence: 99%

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Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7×7) surfaces

Zhou

Xue

Jia

et al. 2009

The Journal of Chemical Physics

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Identical-sized Zn nanoclusters have been grown on Si(111)-(7x7) surfaces at room temperature. In situ scanning tunneling microscopy (STM) studies and first-principles total energy calculations show that room-temperature grown Zn nanoclusters tend to form the seven-Zn-atom structure with one excess Zn atom occupying characteristically the center of the cluster. The evolution of the surface electronic structures measured by scanning tunneling spectroscopy reveals that the formation of Zn nanoclusters is responsible for the saturation of the metallic Si adatom dangling bond states at about -0.3 and +0.5 V and causes the semiconducting characteristics of the nanoclusters. Furthermore, the Zn nanocluster in a faulted half unit cell empties the filled surface dangling bond state of the closest edge Si adatoms in the nearest neighboring uncovered unfaulted half unit cells at about -0.3 V, leading to the suppressed height of the closest edge Si adatoms in the filled-state STM images.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7×7) surfaces

Zhou

Xue

Jia

et al. 2009

The Journal of Chemical Physics

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“…Such a charge transfer occurs because it can lower the total energy of the system. Self-assembled clusters of various metals formed on Si(111)-7 × 7, which have similar network as Ge clusters, have been reported [24,27,28,[90][91][92]. Several groups suggested that the interaction between the substrate and the metal clusters might play a role for the self-organization [24,27,28], and other researchers had emphasized the interaction between the clusters themselves [93].…”

Section: Evolution Of Hexagonal Ge Cluster Superlatticementioning

confidence: 87%

Toward a Detailed Understanding of Si(111)‐7 × 7 Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Wang

Guo

Qin

et al. 2008

Journal of Nanomaterials

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Firstly, both the rest atoms and the adatoms of Si(111)-7×7surface are observed simultaneously by scanning tunneling microscopy (STM) when the sample bias voltages are kept less than − 0.7 V. The visibility of the rest atoms is rationalized by first-principle calculations and a very sharper tip can resolve them. Secondly, the behaviors of various Ge nanostructures fabricated on Si(111)-7×7, ranging from the initial adsorption sites of individual Ge atoms to the aggregation patterns of Ge nanoclusters, and then to 2D extended Ge islands, are comprehensively investigated by STM. The individual Ge atoms tend to substitute for Si adatoms at Si(111)-7×7with the preference of corner adatoms in the faulted half unit when keeping substrate at150∘C. With increasing Ge coverage, individual Ge atoms and Ge nanoclusters coexist on the substrate. Subsequently, the density of Ge nanoclusters increase and cluster-distribution becomes gradually regular with the formation of final 2D extended hexagonal configuration. When keeping the substrate at300∘C, Ge islands consisting of more complicated reconstructions with intermixing Ge/Si components are present on the substrate. The detail structural characterizations and the bonding nature of the observed Ge nanostructures are enunciated by the first-principle calculations.

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“…The clean Si(111)-7 × 7 surface is metallic [ 77 ], but the Si(111)-7 × 7-C 2 H 5 OH surface has a band gap of 2.2 V [ 64 ]. It is known that the atoms or atom cluster of Co, In, Ag, and Sn adsorbed on clean Si(111)-7 × 7 surface are non-metallic [ 63 , 70 , 78 , 79 ]. As shown in Figure 22 (a), 5 nm width Ag dots having 1–2 layers have a band gap of about 2.0 V, but the band gap of Ag dots becomes narrower when the dot has 3–5 layers and the Ag dots have more than five layers, are metallic as shown in Figure 22 (b) [ 71 ].…”

Section: Controlled Growth Of Nano-materials On Composite Surfacesmentioning

confidence: 99%

Surface Nano-Structuring by Adsorption and Chemical Reactions

Tanaka

2010

Materials

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Nano-structuring of the surface caused by adsorption of molecules or atoms and by the reaction of surface atoms with adsorbed species is reviewed from a chemistry viewpoint. Self-assembly of adsorbed species is markedly influenced by weak mutual interactions and the local strain of the surface induced by the adsorption. Nano-structuring taking place on the surface is well explained by the notion of a quasi-molecule provided by the reaction of surface atoms with adsorbed species. Self-assembly of quasi-molecules by weak internal bonding provides quasi-compounds on a specific surface. Various nano-structuring phenomena are discussed: (i) self-assembly of adsorbed molecules and atoms; (ii) self-assembly of quasi-compounds; (iii) formation of nano-composite surfaces; (iv) controlled growth of nano-materials on composite surfaces. Nano-structuring processes are not always controlled by energetic feasibility, that is, the formation of nano-composite surface and the growth of nano-particles on surfaces are often controlled by the kinetics. The idea of the “kinetic controlled molding” might be valuable to design nano-materials on surfaces.

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Electronic structure of Co-induced magic clusters grown onSi(111)−(7×7): Scanning tunneling microscopy and spectroscopy and real-space multiple-scattering calculations

Cited by 23 publications

References 26 publications

Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7×7) surfaces

Structural and electronic properties of identical-sized Zn nanoclusters grown on Si(111)-(7×7) surfaces

Toward a Detailed Understanding of Si(111)‐7 × 7 Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

Surface Nano-Structuring by Adsorption and Chemical Reactions

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