Structural and electronic properties of epitaxial core-shell nanowire heterostructures

Musin, R. N.; Wang, Xiaoqian

doi:10.1103/physrevb.71.155318

Cited by 94 publications

(99 citation statements)

References 31 publications

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“…In recent years, many experimental investigations have been carried out to synthesize and characterize different kinds of core/shell structures such as ZnO/ZnS [13], ZnO/CdS, [14] GaN/GaP, ZnO/TiO2 [15,16], CdSe/CdS [17,18], PbSe/CdSe [19,20], ZnS/CdS [21][22][23][24][25], CdS/ZnS [21,26,27], Ge/Si [28]. Both the classical molecular dynamics (MD) and density functional theory (DFT) methods have been used extensively to study the electronic [29][30][31][32][33][34][35], optical [29,36] and thermal [37][38][39][40][41][42][43][44][45][46][47][48] properties of the core/shell nanostructures. In contrast, mechanical properties of the core/shell nanostructures have so far not been investigated in details.…”

Section: Introductionmentioning

confidence: 99%

Tunable mechanical and thermal properties of ZnS/CdS core/shell nanowires

2015

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Using all atom molecular dynamics (MD) simulations, we have studied the mechanical properties of ZnS/CdS core/shell nanowires. Our results show that the coating of a few atomic layer CdS shell on the ZnS nanowire leads to a significant change in the stiffness of the core/shell nanowires compared to the stiffness of pure ZnS nanowires. The binding energy between the core and shell region decreases due to the lattice mismatch at the core-shell interface. This reduction in binding energy plays an important role in determining the stiffness of a core/shell nanowire. We have also investigated the effects of the shell on the thermal conductivity and melting behavior of the nanowires.

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Section: Introductionmentioning

confidence: 99%

Tunable mechanical and thermal properties of ZnS/CdS core/shell nanowires

2015

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“…Transition metal oxides are also known as semiconducting materials having a wide band gap, which can be tuned while being used as heterostructures. To tune the band gap facilitates rapid charge transport [1] and unique photonic [2] properties which are not possible with a single component or similar structures. Transitional metal oxide heterostructures systems have already exhibited such diverse application as a photocatalyst, photodetectors, FET, LED , gas sensor, chemical sensor, super capacitors, solar cells and surface acoustic wave filters [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Morphological, Structural and Optical Characterization of Bottom-Up Growth of Ag-WO<sub>3</sub> Core-Shell Nano-Cube Heterostructures

Imam

Chopra

2017

Preprint

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Abstract:A new class of nano-cube core-shell heterostructures containing Ag coating on the top of WO3 was fabricated. Physical vapor deposition was used to produce WO3 based nanoheterostructures. All kind of wet toxic chemical process was avoided to make the process simple and contaminant free. Sputtering of WO3 and a subsequent thermal annealing process was done to create nano-cubes of WO3. After that, sputtering of Ag was performed to form the Ag-WO3 coreshell nano-heterostructures (CSNH). The CSNHs were characterized using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), X-ray diffraction analysis (XRD) and UV-vis spectroscopy. The morphologies, elemental analysis, interfaces, crystallinity, phases, and chemical compositions were analyzed. The bottom-up growth of WO3 nanocubes was studied using different time periods at 900°C. Ag coating was also studied before and after annealing. Finally, an optical property (band gap) was also analyzed using Tauc plot derive from absorption spectra. The tailoring the band gap of WO3 from ~2.9eV to ~ 2.45 eV was observed while Ag-WO3 CSNH formed.

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“…The dc characteristics for a small size SNWT predicted by the complete compact model is demonstrated in Figure 25. 3.4 Ge/Si core/shell nanowire MOSFETs modeling As one promising molecular device, Ge/Si core/shell nanowire MOSFET has been intensively studied experimentally and theoretically (Xiang et al, 2006;Lu et al, 2005;Fan et al, 2008;Musin & Wang, 2005;Liang et al, 2007;He, Y. et al, 2008) in recent years. Such a device utilizes the bandstructure engineering (Xiang et al, 2006), strain effect and ballistic transport of 1-dimensional (1D) hole gas (Liang et al, 2007), resulting in very high carrier mobility and excellent performance.…”

Section: Modeling Quantum-mechanical (Qm) Effects and Other Advanced mentioning

confidence: 99%

Silicon-Based Nanowire MOSFETs: From Process and Device Physics to Simulation and Modeling

He¹,

Lou²,

Zhang³

et al. 2011

Nanowires - Implementations and Applications

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Structural and electronic properties of epitaxial core-shell nanowire heterostructures

Cited by 94 publications

References 31 publications

Tunable mechanical and thermal properties of ZnS/CdS core/shell nanowires

Tunable mechanical and thermal properties of ZnS/CdS core/shell nanowires

Morphological, Structural and Optical Characterization of Bottom-Up Growth of Ag-WO<sub>3</sub> Core-Shell Nano-Cube Heterostructures

Silicon-Based Nanowire MOSFETs: From Process and Device Physics to Simulation and Modeling

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