Silicon-Based Nanowire MOSFETs: From Process and Device Physics to Simulation and Modeling

He, Jin‐Sheng; Lou, Haijun; Zhang, Lining; Chan, Mansun

doi:10.5772/16345

Cited by 1 publication

(1 citation statement)

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“…At a fixed V ds , as the gate voltage increases, the conduction current density also increases due to the increased number of charge carriers in the channel. 17 The slope of the current density versus gate voltage curve (i.e., the transconductance) is higher for HfO 2 gate dielectric compared to SiO 2 due to its higher dielectric constant, which allows for better control of the charge carriers in the channel. At a fixed gate voltage, as the drain-source voltage rise, the conduction current density also increases due to the increased electric field across the channel.…”

Section: Simulations and Resultsmentioning

confidence: 99%

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Singh,

Chaudhary,

Raj

2023

ECS J. Solid State Sci. Technol.

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This paper presents the GaN GAA nanowire FET analysis with high K dielectric. The new phase in the development of power semiconductor devices has begun with the introduction of the outstanding benefits of employing wide bandgap semiconductors like gallium nitride (GaN) in the development of sophisticated devices. This work has been carried out to evaluate drain current, electric field, electric potential, and transconductance with SiO2 and HfO2 as dielectric. There are several advantages of switching from silicon-based circuits to GaN-based ones The drain current analysis shows that the device with HfO2 gate dielectric has a higher ON/OFF ratio compared to the device with SiO2 gate dielectric. The transconductance analysis also shows that the device with HfO2 gate dielectric has a higher transconductance value of approximately 9.88 S compared to the device with SiO2 gate dielectric.

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Section: Simulations and Resultsmentioning

confidence: 99%