1992
DOI: 10.1103/physrevb.46.10070
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Structural and electronic properties of narrow-gapABC2chalcopyrite semiconductors

Abstract: The structural and electronic properties of some A "B' C2 ternary semiconductors with chalcopyrite structure are investigated using both the full potential linearized augmented plane wave and the ab initio pseudopotential methods. The total-energy approach is used to determine the internal distortion parameter u, discussed for these materials in terms of atomic radii. In addition, we study the band-gap anomaly, defined as the energy di6'erence with respect to the III-V binary analog compound, and the crystalfi… Show more

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Cited by 40 publications
(19 citation statements)
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“…The experimental structures of KBe 2 BO 3 F 2 47, BPO 4 48, AgGaS 2 49, ZnGeP 2 (ref. 50) were all successfully reproduced at ambient pressure through ABC technique, validating our methodology in application to functional optical materials. The results are listed in Supplementary Fig.…”
Section: Methodssupporting
confidence: 55%
“…The experimental structures of KBe 2 BO 3 F 2 47, BPO 4 48, AgGaS 2 49, ZnGeP 2 (ref. 50) were all successfully reproduced at ambient pressure through ABC technique, validating our methodology in application to functional optical materials. The results are listed in Supplementary Fig.…”
Section: Methodssupporting
confidence: 55%
“…These II-IV-V 2 compounds resemble with the III-V zinc blended binary semiconductors but contain two different cations instead of one in binary. The former structure is logical extension of the latter with some interesting structural anomalies [8,9]. First of all, Goodman [10] investigated the II-IV-V 2 compounds and reported chalcopyrite (CuFeS 2 ) structure for these.…”
Section: Introductionmentioning
confidence: 98%
“…On the theoretical front, Continenza et al [8] calculated the structural and electronic properties of some II-IV-V 2 type chalcopyrite compounds using the FPLAPW and ab-initio pseudopotential methods and examined the variation of band gap with internal distortion parameter (u). Zopal et al [13] predicted the structural, thermodynamic and electronic properties of CdGeAs 2 using linear combination of atomic orbitals (LCAO) method and studied the effect of pressure on electronic band structure.…”
Section: Introductionmentioning
confidence: 99%
“…On the theoretical front, empirical pseudopotential calculations have focused only on its band structure [15,16]. Although calculations based on first-principles methods have been performed on several members of the chalcopyrite group [17,18], we are not aware of any such calculations on CdGeAs 2 .…”
Section: Introductionmentioning
confidence: 99%