Structural and electrical properties of semipolar (11‐22) AlGaN grown on <i>m</i>‐plane (1‐100) sapphire substrates

Jo, Masafumi; Issei, Oshima; Matsumoto, Takuma; Maeda, Noritoshi; Kamata, Norihiko; Hasegawa, Hideki

doi:10.1002/pssc.201600248

Cited by 9 publications

(10 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…All XRD spectra showed the formation of almost single‐phase (11‐22) AlN, due to a high V/III ratio used for the AlN‐1 . The peak position of the (11‐22) reflection remained constant within the experimental resolution (≈0.01°), which indicates that the incorporation of Ga into (11‐22) AlN was negligibly small.…”

Section: Resultssupporting

confidence: 80%

“…Thick (11‐22) AlN has been grown on m ‐plane sapphire by metal‐organic chemical vapor deposition (MOCVD) and molecular‐beam epitaxy . Recently, we have found that high‐temperature growth significantly improved the crystalline quality of (11‐22) AlN . The surface diffusion of Al adatom was enhanced at high temperatures, leading to the growth of high‐quality AlN layers.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Effects of Ga Supply on the Growth of (11‐22) AlN on m‐Plane (10‐10) Sapphire Substrates

Hasegawa

2018

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

Flat and high‐quality semipolar AlN layers are crucial to realizing polarization‐reduced deep‐UV optical devices. We investigate the effects of Ga supply during the growth of semipolar AlN on m‐plane sapphire with the aim to produce better surface morphology. Incorporation of Ga into AlN is negligibly small at high‐temperature growth. The surface roughness significantly decreased with increasing the TMGa flow at a constant V/III ratio.

show abstract

Section: Resultssupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

Effects of Ga Supply on the Growth of (11‐22) AlN on m‐Plane (10‐10) Sapphire Substrates

Hasegawa

2018

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…After regrowth of AlN on the HTA-treated template, the surface morphology of (112̅2) AlN turns back to stripe features similar to that in the as-grown sample. No obvious difference in the surface morphology can be identified between Figure b,d, while the RMS roughness further reduces to 1.46 nm after AlN regrowth, smaller than the ever-reported values of heteroepitaxial AlN on m -sapphire. − …”

Section: Resultsmentioning

confidence: 65%

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Chen

Lin

Chen

et al. 2021

Crystal Growth & Design

View full text Add to dashboard Cite

Semipolar III-nitrides have attracted great attention due to their weak polarization field for optoelectronic devices. High-quality AlN is a perfect template in the epitaxial growth of AlGaN-based ultraviolet optical devices. In this work, (112̅2) semipolar AlN was grown on m-plane sapphire by the hierarchical growth mode. A high density of extended defects due to the lattice mismatch and anisotropic growth rate is identified in the as-grown AlN thin film. The influence of thermal annealing and AlN regrowth on the evolution of stacking faults and dislocations in AlN was thoroughly investigated by high-resolution transmission electron microscopy. Extending defects turned into partial dislocations after high-temperature treatment, by which the stacking faults were buried inside the AlN template, incapable of propagating into the AlN regrowth layer. As a result, the AlN regrowth layer exhibits superior crystalline quality. However, compressive strain is found after high-temperature annealing (HTA), which introduces new defects in the AlN regrowth layer. Strain management is demonstrated to be crucial for the quality control of the AlN layer. Overall, high-temperature annealing and regrowth processes proved to be stable and repeatable techniques in the realization of high-efficiency semipolar UV semiconductor devices.

show abstract

“…In contrast, the high temperature (>1200 °C) is beneficial to promote the coalescence of AlN grains, and thus improve the quality of AlN film [ 6 ]. Moreover, some research groups have obtained high-quality semi-polar AlN in the high-temperature region, ranging from 1200 to 1650 °C [ 8 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. Jo et al obtained smooth (11

2) AlN with a thickness of 2 μm by metal organic chemical vapor deposition (MOCVD) at 1500 °C [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, some research groups have obtained high-quality semi-polar AlN in the high-temperature region, ranging from 1200 to 1650 °C [ 8 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. Jo et al obtained smooth (11

2) AlN with a thickness of 2 μm by metal organic chemical vapor deposition (MOCVD) at 1500 °C [ 21 ]. Shen et al prepared the best quality semi-polar (10

3) AlN with NH 3 -free metalorganic vapor phase epitaxy (MOVPE) at a high temperature of 1650 °C [ 20 ].…”

Section: Introductionmentioning

confidence: 99%

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Zhao

Liu

et al. 2021

Materials

View full text Add to dashboard Cite

Aluminum nitride (AlN) films were grown on the m-plane sapphire by high-temperature hydride vapor phase epitaxy (HVPE). The effect of high-temperature nitridation on the quality of AlN film was studied. The high-temperature nitridation is favorable for the formation of semi-polar single (101¯3) orientation AlN film, the quality of which shows strong dependence on the nitridation temperature. The full width at half maximum of X-ray diffraction for (101¯3) AlN film was only 0.343° at the optimum nitridation temperature of 1300 °C. It is found that the nano-holes were formed on the surface of substrates by the decomposition of sapphire in the process of high-temperature nitridation, which is closely related to the quality improvement of AlN. At the critical nitridation temperature of 1300 °C, the average size of the nano-holes is about 70 nm, which is in favor of promoting the rapid coalescence of AlN micro-grains in the early stages. However, the size of nano-holes will be enlarged with the further increase of nitridation temperature, which begins to play a negative role in the coalescence of AlN grains. As a result, the grain size will be increased and extended to the epilayer, leading to the deterioration of the AlN film.

show abstract

Structural and electrical properties of semipolar (11‐22) AlGaN grown on m‐plane (1‐100) sapphire substrates

Cited by 9 publications

References 20 publications

Effects of Ga Supply on the Growth of (11‐22) AlN on m‐Plane (10‐10) Sapphire Substrates

Effects of Ga Supply on the Growth of (11‐22) AlN on m‐Plane (10‐10) Sapphire Substrates

Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth

Growth of Semi-Polar (101¯3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE

Contact Info

Product

Resources

About