Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

Yoon, Young Soo; Kim, Han−Ki

doi:10.1007/s10832-006-7729-7

Cited by 4 publications

(2 citation statements)

References 31 publications

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“…By means of this technique, we obtained that the sheet resistance equals to 53 kΩ and the contact resistivity equals to 2.7 mΩ cm 2 (averages obtained on 6 samples). These values are quite high for state-of-the art devices (for istance, ρ C = 31 µΩ cm 2 in [8]). However, we have chosen to carry out the study on these structures, because they showed enhanced degradation when submitted to thermal stress: in this way, we Original Paper have been able to achieve an accurate description of degradation kinetics.…”

Section: Resultsmentioning

confidence: 98%

High temperature instabilities of ohmic contacts on p‐GaN

Trevisanello

Meneghini

Zehnder

et al. 2008

Phys. Status Solidi (c)

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This paper describes an investigation of the instabilities of ohmic contacts on p-type GaN submitted to long term high temperature stress. Transfer Length Method (TLM) was used to separately analyze the contribution of contact resistivity and sheet resistance on contact degradation. Before treatment, contacts showed linear behaviour, indicating good ohmic properties. On the other hand, thermal ageing at 250 ◦ C induced the degradation of electrical characteristics: in particular, (i) an increase of the contact resistivity was detected after stress, as well as (ii) a rectifying behaviour in current-voltage (IV) characteristics of contact appeared. The degradation process has been ascribed to the diffusion of an atomics species from PECVD-deposited passivation layer to p-type ohmic contact: the interaction of this species with acceptor dopant can lower acceptor concentration, thus broadening the Schottky barrier at the interface and inducing the observed non-linearity of the contacts. The square root time dependence of degradation of the electrical characteristics agreed with the hypothesis of diffusion. After 160 hours of aging, the passivation layer was removed and the structures were submitted to a new thermal treatment. This further treatment was found to induce the recovery of the electrical characteristics of the contacts, due to the fact that passivation acts like (i) a source of atomic species responsible of diffusion and/or (ii) a blocking layer for these species: the removal of passivation stopped the diffusion process and make outgassing process possible

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Section: Resultsmentioning

confidence: 98%

High temperature instabilities of ohmic contacts on p‐GaN

Trevisanello

Meneghini

Zehnder

et al. 2008

Phys. Status Solidi (c)

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“…Generally, the epitaxial growth of III-nitrides has focused on the improvement of optical and crystal qualities of InGaN multi-quantum wells (MQWs) since they are used as active medium of AlInGaN-based laser diodes (LDs) as a lighting source for optical storage system and mobile display systems [1][2][3][4][5][6][7]. Recently, although the reliability of AlInGaN-based LDs has been drastically improved by the introduction of GaN substrate with low dislocation density, there are some reliability problems in the AlInGaN-based LD/LEDs [1].…”

Section: Introductionmentioning

confidence: 99%

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

et al. 2008

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We investigated the effects of Mg dopant on the degradation of AlInGaN-based light emitting diodes (LEDs) and laser diodes (LDs) with InGaN multi-quantum wells (MQWs). Photoluminescence (PL) intensity of InGaN MQWs was significantly decreased with increasing the Mg intentional doping process in InGaN active region, indicating that Mg dopant could degrade the optical quality of InGaN MQWs. From secondary ion mass spectroscopy (SIMS) analysis of AlInGaN-based LDs grown on GaN/ sapphire and GaN substrate with different dislocation densities, we found that Mg concentration of LD on GaN/ sapphire was higher than that of LD on GaN substrate at the InGaN MQWs regions. Additionally, we observed that Mg atoms were significantly diffused from p-type layer to InGaN MQWs region in the LD structure after aging evaluation. From these results, we could conclude that Mg diffusion along threading dislocations is one of the major gradual degradation mechanisms of AlInGaN-based LD/ LEDs during the device operation under high voltage condition.

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Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

Kim

Lee

2009

Thin Solid Films

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Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

Cited by 4 publications

References 31 publications

High temperature instabilities of ohmic contacts on p‐GaN

High temperature instabilities of ohmic contacts on p‐GaN

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

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