2012
DOI: 10.1016/j.jallcom.2011.09.011
|View full text |Cite
|
Sign up to set email alerts
|

Structural and electrical properties of Gd(Ni1/2Zr1/2)O3

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2013
2013
2017
2017

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 17 publications
(4 citation statements)
references
References 25 publications
0
4
0
Order By: Relevance
“…The presence of a single semicircular arc passing through the origin in the entire frequency region for all the temperatures for AST indicates that the relaxation mechanism in them may be only a bulk effect . We observed that the complex plane plot of Z* is better described by using the Cole–Cole equation, which is commonly used for polycrystalline ceramic samples and given asZ=Rg1+(iωnormalτnormalg)1αwhere R g and C g represent the grain resistance and grain capacitance, respectively, τ g = R g C g and the parameter α is a constant (0 < α ≤ 1). This model is used to measure the departure of the relaxation phenomenon from the ideal Debye response.…”
Section: Resultsmentioning
confidence: 89%
See 1 more Smart Citation
“…The presence of a single semicircular arc passing through the origin in the entire frequency region for all the temperatures for AST indicates that the relaxation mechanism in them may be only a bulk effect . We observed that the complex plane plot of Z* is better described by using the Cole–Cole equation, which is commonly used for polycrystalline ceramic samples and given asZ=Rg1+(iωnormalτnormalg)1αwhere R g and C g represent the grain resistance and grain capacitance, respectively, τ g = R g C g and the parameter α is a constant (0 < α ≤ 1). This model is used to measure the departure of the relaxation phenomenon from the ideal Debye response.…”
Section: Resultsmentioning
confidence: 89%
“…The presence of a single semicircular arc passing through the origin in the entire frequency region for all the temperatures for AST indicates that the relaxation mechanism in them may be only a bulk effect. 39,40 We observed that the complex plane plot of Z* is better described by using the Cole-Cole equation, [40][41][42] which is commonly used for polycrystalline ceramic samples and given as 43…”
Section: Resultsmentioning
confidence: 99%
“…However, a single semi-circle appears, that can be attributed to a contribution from the grain properties of the material and modeled by a parallel RC equivalent circuit in the frequency range analyzed, where R represents the resistance and C the geometric capacitance of the samples [21]. In addition, the complex plane plot of Z¼Z′ þjZ″ can be described by the Cole-Cole model [25,26] which is given by:…”
Section: Jcpds Cardmentioning
confidence: 99%
“…7(c) displays for FNT005 (air) a presentation of tan δ vs. frequency for various temperatures, whence for each temperature a low-and high-frequency peak is visible, arising from GB/SE and bulk relaxation processes, respectively. From these peaks, activation energies can be derived according to the relation f tanmax ∝ exp(−E Atan /k B T), with f tanmax the frequency at the maximum, E Atan the activation energy for a relaxation process to occur [41][42][43][44][45][46]. From data for several temperatures, E Atan =0.48 eV and 0.68 eV were deduced for bulk and GB/SE processes, respectively.…”
Section: Electrical Propertiesmentioning
confidence: 99%