Optical and electrical measurement of FeSe2 thin films obtained at low temperature

In Situ Monitoring of Crystallinity of FeSe2 Thin Films During Thermal Annealing and the Annealing Effects on the Structural, Optical and Dielectric Properties

“…[ 5 ] Other methods prepared FeSe 2 thin films through selenization of iron films at 350 °C and 6 h annealing time. [ 6 ] These films were of crystalline nature but exhibited low transmittance and low reflectance in the spectral range of 400–1800 nm. [ 6 ] The energy bandgap of these films was as low as 1.1 eV.…”

“…[ 6 ] These films were of crystalline nature but exhibited low transmittance and low reflectance in the spectral range of 400–1800 nm. [ 6 ] The energy bandgap of these films was as low as 1.1 eV. [ 6 ] In a study that targeted deposition of iron selenide FeSe 2 thin films by the pulsed laser deposition technique onto CaF 2 , LiF, and SrTiO 3 substrates, crystalline iron monoselenide phase was formed.…”

“…[ 6 ] The energy bandgap of these films was as low as 1.1 eV. [ 6 ] In a study that targeted deposition of iron selenide FeSe 2 thin films by the pulsed laser deposition technique onto CaF 2 , LiF, and SrTiO 3 substrates, crystalline iron monoselenide phase was formed. [ 7 ] This compound exhibited low dielectric constant of value of 3.2 and 1.2 in the infrared and ultraviolet ranges of light, respectively.…”