Structural and electrical investigations of MBE-grown SiGe nanoislands

Abstract

SiGe nanoislands were grown by Molecular Beam Epitaxy (MBE) method on Si (100) substrates with comparative growth parameters such as annealing temperature, top Ge content and layer-by-layer annealing (LBLA). XRD and Raman data suggest that annealing temperature, top Ge content and layer-by-layer annealing (LBLA) can overall give a control not only over the amorphous content but also over yielding the strained Ge layer formation in addition to mostly Ge crystallites. Depending on the layer design and growth conditions, size of the crystallites was observed to be changed. Four Point Probe (FPP) Method via Semiconductor Analyzer shows that 100 °C rise in annealing temperature of the samples with Si 0.25 Ge 0.75 top layers caused rougher islands with vacancies which further resulted in the formation of laterally higher resistive thin film sheets. However, vertically performed I-AFM analysis produced higher I-V values which suggest that the vertical and horizantal conductance mechanisms appear to be different. Ge top-layered samples gained greater crystalline structure and better surface conductivity where LBLA resulted in the formation of Ge nucleation and tight 2D stacking resulting in enhanced current values.

Preferential MBE Growth and Characterization of SiGe Nanoislands on Depth‐Selective Si Pits Etched by Ar+ Plasma

“…For homogenous coating, sample holder was rotated at 10 rpm. The MBE system was optimized before the deposition process so that the thickness of the deposition could be well controlled as also demonstrated in our previous study . In addition to the deposition thicknesses used in this study, various deposition thicknesses and different nanopit geometries could be tried, however, due to the volume restriction in our study this could not be possible.…”

The magneto-optics in quantum wires comprised of vertically stacked quantum dots: A calling for the magnetoplasmon qubits

“…Immediately upon being noticed due to the device potential, this discovery ignited an explosion in investigation into the physics of quantum dots and a large number of groups became active embarking on a variety of research interests. The result was a long list of experimental [29][30][31][32][33][34][35][36][37][38] and theoretical [39][40][41][42][43][44][45][46][47][48] works dealing with elastic, thermal, electrical, magnetic, electronic, and optical phenomena, which motivated authors to envisage various solid-state devices. Early efforts had largely focused on the pairs of VSQD separated by thin barrierstermed quantum dot molecules (QDM) -because of their importance in realizing the short-distance quantum-state transfer, which is essential for the future quantum communication networks.…”