Abstract:In this study, the size selective deposition of SiGe nanoislands is demonstrated to be possible only in Si nanopits using a molecular beam epitaxy (MBE) system. The depth of the etched Si substrate prepared by Ar+ plasma etching just before the deposition seems to be playing a role in the selectivity of keeping the SiGe nanoislands only inside the nanopits. We observed that, when the thickness of the deposited SiGe layer is around the mean pit depth, which is 4 nm in this case, Ge nucleation takes place select… Show more
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