Structural and Acoustic Properties of ZnO Thin Films Prepared by Spray

Amlouk, M.; Touhari, F.; Belgacem, S.; Kamoun, N.; Barjon, D.; Bennaceur, R.

doi:10.1002/1521-396x(199709)163:1<73::aid-pssa73>3.0.co;2-9

Cited by 23 publications

(12 citation statements)

References 10 publications

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“…• C (optimal value under the given experimental conditions, as already confirmed by A. Amlouk et al [23,24]), was used to prepare these films according to in-room precedent successful attempts of deposition by the spray pyrolysis process [28][29][30][31][32][33][34] …”

Section: Methodsmentioning

confidence: 99%

An Attempt to Optimize ZnO-Like TCO Nanolayered Compound Thickness in Terms of a BPES-Related Physical Parameters Pondering

et al. 2012

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Recently, metal oxide nanolayered semiconductors revealed their increasing usefulness as UV detectors and transparent conductors in optoelectronic devices. In the present paper, a simple fabrication process has been carried out to prepare layered TCO compounds with different controlled thicknesses. Conjoint physical investigations allowed discussion of the validity of optimality in terms of geometrical parameters. A synthetic function based on pondered physical parameters was a practical guide to reach optimality.

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Section: Methodsmentioning

confidence: 99%

An Attempt to Optimize ZnO-Like TCO Nanolayered Compound Thickness in Terms of a BPES-Related Physical Parameters Pondering

et al. 2012

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“…These photodiodes are Germanium junctions formed by ion implantation where we deposited on the front face a thin layer of zinc oxide by the Spray pyrolysis technique [4,7,8].…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Achour

Hammami

Touayar

2017

Int. J. Metrol. Qual. Eng.

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Abstract. The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800 nm to 2000 nm. The shunt resistance increases from 95 V to 12.915 kV. However, the series resistance increases from 1.08 V to 36 V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results.

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“…ZnO is an attractive semiconductor due to its low cost, nontoxicity, high stability and high transparency in the visible wavelength. It is a promising material for many applications in toxic gas sensors [7], solar cell windows [8], blue and ultraviolet (UV) light emitting devices [9], transparent conductors [10], surface acoustic devices [11], photovoltaic devices [12]. The substrate is very important for the growth of thin films.…”

Section: Introductionmentioning

confidence: 99%

Substrate Effects on Structural and Optical Properties of ZnO Thin Films Deposited by Chemical Spray Pyrolysis

Mousa

Habubi

Nema

2015

ILCPA

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ZnO thin films deposited on various substrates including glass, quartz, and ITO (Indium Tin Oxide) coated on glass substrates have been conducted by (CSP) technique. Characterization techniques of X-ray diffraction (XRD), atomic force microscopy (AFM), UVvisible, and photoluminescence (PL) spectra measurements were performed to investigate the effects of substrate on the structural and optical properties of ZnO thin films. Samples were prepared the thickness of thin films are (80 nm) and substrate temperature kept at (400°C) in all cases. Compressed nitrogen was used as a carrier gas. The XRD results indicated that the synthesized ZnO thin films have a pure wurtzite (hexagonal phase) structure. It can be seen that the highest texture coefficient was in (002) plane . So when a good crystalline substrate like quartz is used for depositing the film, the lattice matching with the deposited film material would be better. AFM measurement showed the grain size ranging from (62-86) nm. The optical studies showed that the thin film for ITO coated glass substrate higher transmittance than glass and quartz substrate. The optical band gap for ZnO thin films have two values for the same sample, and we will note the band gap of the thin films increasing with increase the crystalline of substrate. The energy gap from photoluminescence (PL) spectra is (3.369 eV) for all samples.

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Structural and Acoustic Properties of ZnO Thin Films Prepared by Spray

Cited by 23 publications

References 10 publications

An Attempt to Optimize ZnO-Like TCO Nanolayered Compound Thickness in Terms of a BPES-Related Physical Parameters Pondering

An Attempt to Optimize ZnO-Like TCO Nanolayered Compound Thickness in Terms of a BPES-Related Physical Parameters Pondering

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Substrate Effects on Structural and Optical Properties of ZnO Thin Films Deposited by Chemical Spray Pyrolysis

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