Structural analysis of ion-implanted chemical-vapor-deposited diamond by transmission electron microscope

Jiang, Nan; Deguchi, Masahiro; Wang, C.L.; Won, J.H.; Jeon, Hyeongmin; Mori, Yusuke; Hatta, Akimitsu; Kitabatake, Makoto; Ito, Toshimichi; Hirao, Takashi; Sasaki, T.; Hiraki, Akio

doi:10.1016/s0169-4332(96)00927-0

Cited by 5 publications

(1 citation statement)

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“…The etch rate of the films has been examined as a function of the ion dose and the mass of the implant species (C + , Si + or Sn + ). At intermediate doses, the implantation produced a partial graphitisation while a full amorphisation was evident above a critical level of dose, D c , dependent on the implanted ion [4][5][6]. Ion implantation at low doses resulted in the formation of clusters of point defects around each track [4,5].…”

Section: Introductionmentioning

confidence: 99%

C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

et al. 2004

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Diamond films were implanted with C + , Si + or Sn + ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C + implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp 2 -bonded carbon at doses of 5 x 10 13 -5 x 10 15 ions/cm 2 . In comparison, an amorphization of the structure was evident after implantation with either Si + ions at a dose of 5 x 10 15 ions/cm 2 or with Sn + ions at >5 x 10 14 ions/cm 2 . At a given implantation dose, the etch rate of the diamond film in a CF 4 /O 2 plasma increased with the mass of the implanted species in the order of C + , Si + and Sn + . For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.

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