Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors

Sakano, M.; Bahramy, M. S.; Katayama, Akiko; Shimojima, T.; Murakawa, H.; Kaneko, Yoshio; Malaeb, Walid; Shin, Shik; Ono, Kanta; Kumigashira, Hiroshi; Arita, Ryotaro; Nagaosa, Naoto; Hwang, Harold Y.; Tokura, Y.; Ishizaka, K.

doi:10.1103/physrevlett.110.107204

Cited by 170 publications

(229 citation statements)

References 25 publications

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“…On the basis of angular-resolved photoemission spectroscopy (ARPES), [5,6] magnetotransport, optical spectroscopy, [25] as well as densityfunctional calculations (including SOC), [5,7] the BiTeI polar structure and the large spin-orbit interaction give rise to a giant Rashba-like spin splitting in the bulk conduction and valence bands of BiTeI, also reflected in a giant and robust spin-splitting at its surface. Similar results were also found for related compounds, such as BiTeBr [19,20]. However, the presence of bistability granted by GeTe ferroelectricity represents a remarkable improvement over the Rashba phenomenology observed in BiTeI and BiTeBr.…”

Section: Coexistence and Coupling Between "Bulk" Rashba Effect And Fesupporting

confidence: 73%

Ferroelectric Rashba semiconductors as a novel class of multifunctional materials

2014

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The discovery of novel properties, effects or microscopic mechanisms in modern materials science is often driven by the quest for combining, into a single compound, several functionalities: not only the juxtaposition of the latter functionalities, but especially their coupling, can open new horizons in basic condensed matter physics, in materials science and technology. Semiconductor spintronics makes no exception. In this context, we have discovered by means of density-functional simulations that, when a sizeable spin-orbit coupling is combined with ferroelectricity, such as in GeTe, one obtains novel multifunctional materials -called Ferro-Electric Rashba Semi-Conductors (FERSC)where, thanks to a giant Rashba spin-splitting, the spin texture is controllable and switchable via an electric field. This peculiar spin-electric coupling can find a natural playground in small-gap insulators, such as chalcogenides, and can bring brand new assets into the field of electricallycontrolled semiconductor spintronics.

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Section: Coexistence and Coupling Between "Bulk" Rashba Effect And Fesupporting

confidence: 73%

Ferroelectric Rashba semiconductors as a novel class of multifunctional materials

2014

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“…More recently, a bulk (three-dimensional) polar semiconductor BiTeI has been shown to host a large Rashba-type spin-split bulk band structure [21]. Similar to the case of TIs, ARPES [21][22][23][24] and magnetotransport [25][26][27] have identified several salient features that point to the unique role of SOI in the electronic properties of these materials. It is widely expected that more exotic phases may exist also at the nexus of such bulk polar materials.…”

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confidence: 95%

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

et al. 2014

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BiTeI is a polar semiconductor with gigantic Rashba spin-split bands in bulk. We have investigated the effect of pressure on the electronic structure of this material via magnetotransport. Periods of Shubunikov-de Haas (SdH) oscillations originating from the spin-split outer Fermi surface and inner Fermi surface show disparate responses to pressure, while the carrier number derived from the Hall effect is unchanged with pressure. The associated parameters which characterize the spin-split band structure are strongly dependent on pressure, reflecting the pressure-induced band deformation. We find the SdH oscillations and transport response are consistent with the theoretically proposed pressure-induced band deformation leading to a topological phase transition. Our analysis suggests the critical pressure for the quantum phase transition near P c = 3.5 GPa. The spin-orbit interaction (SOI) plays a central role in determining the behavior of electrons in solids. In addition to the SOI-related subjects of spintronics, such as generation, manipulation, and detection of spin information, there has recently been an intense focus on the effect of the SOI on the electronic band structure itself. In particular, an extremely large SOI in small gap semiconductors has been shown theoretically [1][2][3][4] and experimentally [5][6][7] to give rise to a new exotic state of matter known as the topological insulator (TI). As probed by numerous experiments including angle resolved photoemission spectroscopy (ARPES) [6,7] and magnetotransport [8][9][10][11][12], this bulk insulating phase hosts metallic surface states composed of spin-polarized Dirac fermions, attracting both fundamental and technological interest [13,14].The spin texture in the momentum space of the TI surface state is analogous to a Rashba-type spin structure [15]. A Rashba-type structure can be expected in a system with broken inversion symmetry so that electrons are subject to an effective SOI driven k-dependent Zeeman field perpendicular to both the polar axis and crystal momentum [15]. This effect in TIs and other Rashba-type materials lifts spin degeneracy in the Fermi surface, resulting in a chiral spin texture. Historically, this effect has been studied in surface [16][17][18] and interface [19] systems and more recently for the surface of TIs [20], where such a breaking of inversion symmetry naturally arises. More recently, a bulk (three-dimensional) polar semiconductor BiTeI has been shown to host a large Rashba-type spin-split bulk band structure [21]. Similar to the case of TIs, ARPES [21][22][23][24] and magnetotransport [25][26][27] have identified several salient features that point to the unique role of SOI in the electronic properties of these materials. It is widely expected that more exotic phases may exist also at the nexus of such bulk polar materials.It was recently predicted by first-principles calculations that BiTeI shows a topological transition under pressure [28]. Figure 1 shows the evolution of the band structure of BiTeI with the app...

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“…The Rashba effect can be utilized in important spintronics applications, such as the spin-based transistor [11]. The effects of large Rahba spin splitting in A 5 B 6 C 7 by angle-resolved photoemission spectroscopy (ARPES) has been observed [6,[12][13][14][15].…”

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confidence: 99%

Optical, electronic, and elastic properties of some A⁵B⁶C⁷ferroelectrics (A=Sb, Bi; B=S, Se; C=I, Br, Cl): First principle calculation

et al. 2017

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Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors

Cited by 170 publications

References 25 publications

Ferroelectric Rashba semiconductors as a novel class of multifunctional materials

Ferroelectric Rashba semiconductors as a novel class of multifunctional materials

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Optical, electronic, and elastic properties of some A⁵B⁶C⁷ferroelectrics (A=Sb, Bi; B=S, Se; C=I, Br, Cl): First principle calculation

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Strongly Spin-Orbit Coupled Two-Dimensional Electron Gas Emerging near the Surface of Polar Semiconductors

Cited by 170 publications

References 25 publications

Ferroelectric Rashba semiconductors as a novel class of multifunctional materials

Ferroelectric Rashba semiconductors as a novel class of multifunctional materials

Pressure variation of Rashba spin splitting toward topological transition in the polar semiconductor BiTeI

Optical, electronic, and elastic properties of some A5B6C7ferroelectrics (A=Sb, Bi; B=S, Se; C=I, Br, Cl): First principle calculation

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Optical, electronic, and elastic properties of some A⁵B⁶C⁷ferroelectrics (A=Sb, Bi; B=S, Se; C=I, Br, Cl): First principle calculation