Strongly modulated conductivity in a perovskite ferroelectric field-effect transistor

Storage and Erasure of Optical Information in Pt-PZT-SnO2Thin Film Structures

“…The field interaction between the surface charge of ferroelectric remnant polarization and the charge carriers in the semiconductor film led to either depletion or enrichment of the semiconductor near-surface region, with the corresponding change in conductivity of the resistor. According to published data [5][6][7], an effective operation of such structures is directly related to a partial screening of the polarization by charges localized in surface states at the ferroelectric-semiconductor interface. As a result, the change in conductivity is significantly smaller than expected.…”

“…Despite obvious advantages of such structures, considerable technological problems have been encountered in their fabrication. These difficulties are attributed in part to the physico-chemical compatibility of these thin films and hinder still the creation of thin-film ferroelectric-semiconductor devices for effective control and possessing reproducible characteristics [3][4][5][6][7]. Numerous variations of the transistor structures with ferroelectric gates were obtained by depositing a ferroelectric film onto a silicon substrate [1,3,4] or by combining ferroelectric and semiconductor films [5][6][7].…”

Application of Perovskite‐Structured Materials in Field‐Effect Transistors

“…Oxide perovskite materials, such as AMnO 3 , [11,67] ATiO 3 , [6,12,14,[68][69][70][71][72][73][74] A 2 CuO 4 , [75] ATaO 3 , [76,77] and ASnO 3 , [15] can be used as active layers in FETs. The electron mobility values measured in a FET device for oxide perovskite materials are summarized in Figure 2a.…”

“…The spin-precession length of electrons, which can be modified by the gate voltage, can be as short as tens of nm at large V G . [75] In this device, the channel conductivity was controlled by the hopping mechanism with variable jump length and determined by the Coulomb gap at the Fermi level. [77] Different perovskite structured materials, such as BaSnO 3 and LaCuO 4 , were also applied for FETs.…”

“…The results indicated that 5d transition metal compounds with strong atomic spin-orbit couplings resulting from heavy 5d elements could be utilized to control spins in nanoscale spintronic devices. [75] Typically, the sheet carrier density obtained in metal-insulator-semiconductor FET structures is about ≈1 × 10 13 cm −2 . For example, La-doped BaSnO 3 was used as an active layer in an all perovskite FETs, where LaInO 3 was the gate dielectric layer and 4% La-doped BaSnO 3 was used as source and drain electrode because of lattice-matching between BaSnO 3 and LaInO 3 as well as because of high thermal stability in terms of oxygen diffusion constant.…”