Strongly index-guided II-VI laser diodes

Legge, M.; Bacher, G.; Bäder, S.; Forchel, A.; Lugauer, H.‐J.; Waag, A.; Łandwehr, G.

doi:10.1109/68.826899

Cited by 11 publications

(6 citation statements)

References 6 publications

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“…Comparatively, fewer works have been reported on single mode operation in high performance In(Ga)As/GaAs QD lasers [ 12 , 13 ]. It is commonly known that as the ridge width narrows, the sidewall condition plays an important role in the laser performance, where sidewall scattering/recombination [ 22 ] tends to degrade the laser performance. Undesirable lateral current spreading resulting from sidewall effects have been investigated for improving the laser structure design [ 22 - 24 ].…”

Section: Introductionmentioning

confidence: 99%

“…It is commonly known that as the ridge width narrows, the sidewall condition plays an important role in the laser performance, where sidewall scattering/recombination [ 22 ] tends to degrade the laser performance. Undesirable lateral current spreading resulting from sidewall effects have been investigated for improving the laser structure design [ 22 - 24 ]. Moreover, the small lasing volume in narrow RWG lasers may increase the optical losses as result of process related scattering.…”

Section: Introductionmentioning

confidence: 99%

“…A key factor to achieve single mode emission is narrow ridge width of the QD laser structure. To obtain strong index guiding and to suppress current spreading, careful balance between etch depth and ridge width should be accomplished [ 22 ]. Our previous works [ 26 , 27 ] have shown that by optimizing the pulsed anodic oxidation (PAO) process after sidewall etching, high-performance RWG lasers with reduced lateral current spreading could be achieved.…”

Section: Introductionmentioning

confidence: 99%

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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Cao

Yoon

et al. 2007

Nanoscale Res Lett

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Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Cao

Yoon

et al. 2007

Nanoscale Res Lett

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“…As the influence of a surface recombination strongly depends on the waveguide width [8], wide waveguide width is preferable. However, the carrier confinement worsens, and multimode lasing easily occurs.…”

Section: Resultsmentioning

confidence: 99%

Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides

Leem¹

2010

ETRI J

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The fundamental transverse mode lasing of a hybrid laser diode is a prerequisite for efficient coupling to a single‐mode silicon waveguide, which is necessary for a wavelength‐division multiplexing silicon interconnection. We investigate the lasing mode profile for a hybrid laser diode consisting of silicon slab and InP/InGaAsP deep ridge waveguides. When the thickness of the top silicon is 220 nm, the fundamental transverse mode is lasing in spite of the wide waveguide width of 3.7µm. The threshold current is 40 mA, and the maximum output power is 5 mW under CW current operation. In the case of a thick top silicon layer (1 µm), the higher modes are lasing. There is no significant difference in the thermal resistance of the two devices.

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“…This reduces the quantum efficiency in quantum wires and dots 5 as well as in laser diodes. 12 In the case of III-V materials it has been shown that an epitaxial regrowth using metalorganic chemical vapor deposition is able to suppress the nonradiative sidewall losses very efficiently. 13,14 On the other hand, an epitaxial overgrowth of etched nanostructures is certainly more difficult for the molecular beam epitaxy ͑MBE͒ technique due to the sample exposure to the air after etching, which causes an undefined and uncontrollable surface coverage.…”

Section: Introductionmentioning

confidence: 99%

Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors

Legge

Bacher

Bäder

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A selective dry etching technique for II–VI semiconductors based on ZnSe has been developed by using thermally assisted electron cyclotron resonance etching with a gas mixture of Ar, Cl2, and BCl3. While the etching process is found to be almost nonselective between ZnSe and MgZnSSe at low (<100 °C) and high (>220 °C) substrate temperatures, a strong selectivity is obtained in the intermediate temperature range (e.g., 12:1 for Tsub=180 °C). Due to the ultrahigh vacuum (UHV) design of the etching chamber, a complete in situ fabrication of buried II–VI nanostructures should be accessible.

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Strongly index-guided II-VI laser diodes

Cited by 11 publications

References 6 publications

Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides

Selective ultrahigh vacuum dry etching process for ZnSe-based II–VI semiconductors

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