Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers

Abstract

Ten-layer InAs/In0.15Ga0.85As quantum dot (QD) laser structures have been grown using molecular beam epitaxy (MBE) on GaAs (001) substrate. Using the pulsed anodic oxidation technique, narrow (2 μm) ridge waveguide (RWG) InAs QD lasers have been fabricated. Under continuous wave operation, the InAs QD laser (2 × 2,000 μm2) delivered total output power of up to 272.6 mW at 10 °C at 1.3 μm. Under pulsed operation, where the device heating is greatly minimized, the InAs QD laser (2 × 2,000 μm2) delivered extremely high output power (both facets) of up to 1.22 W at 20 °C, at high external differential quantum efficiency of 96%. Far field pattern measurement of the 2-μm RWG InAs QD lasers showed single lateral mode operation.

The transition mechanisms of type-II GaSb/GaAs quantum-dot infrared light-emitting diodes

“…Quantum-dot (QD) light-emitting devices operated in the near infrared range have been widely investigated in recent years [1][2][3][4]. Due to its unique optical characteristics, high-power and temperature-insensitive QD laser diodes (LDs) have already been fabricated [1,2].…”

“…Due to its unique optical characteristics, high-power and temperature-insensitive QD laser diodes (LDs) have already been fabricated [1,2]. To push the emitting wavelengths to the optical-communication range, device/structure with self-assembled InAs QDs capped by an InGaAs strain-reducing layer has exhibited 1.3 mm emitting wavelength [3].…”

Improving size distribution of InAs quantum dots for intersubband devices

“…Since then, the InAs/GaAs material system remains the most studied, but self-assembled semiconductor QDs are not limited to just this system [3]. Progress in the growth and control of QDs has led to devices and applications ranging from 1.3 mm emission and longer to high-efficiency QD lasers [4][5][6][7][8][9][10][11]. The room-temperature QD emission at a wavelength of 1.1 mm (1.127 eV) is well established using the InAs QDs in a GaAs matrix, while the 1.3 mm (0.954 eV) wavelength and beyond are very difficult in a GaAs matrix without changing the QD material or placing the QDs in a well [12][13][14][15][16].…”

“…Progress in the growth and control of QDs has led to devices and applications ranging from 1.3 mm emission and longer to high-efficiency QD lasers [4][5][6][7][8][9][10][11]. The room-temperature QD emission at a wavelength of 1.1 mm (1.127 eV) is well established using the InAs QDs in a GaAs matrix, while the 1.3 mm (0.954 eV) wavelength and beyond are very difficult in a GaAs matrix without changing the QD material or placing the QDs in a well [12][13][14][15][16]. Our goal is to create small uniform QDs with states above the GaAs bandedge for use in unipolar intersubband applications [17,18], like MIR and THz detectors and quantum cascade lasers [19][20][21].…”

A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

“…InAs nanostructures embedded in GaAs matrix having a lattice mismatch of about 7.2%, received much attention because of their potential application both for fundamental studies as well as for device applications like QD photodetectors [1,2], lasers [3,4], etc. All the applications use either single or stacked layer of QDs in the active region.…”