BaTi03 powder doped with La donor and codoped with Mn or Mg acceptor was sintered at 135OoC/1 h in air. For Ladoped BaTi03, the room-temperature resistivity decreased to a minimum at [La3'] -0.15 mol%. For La-Mn-codoped BaTi03, the minimum resistivity occurred at [La3'] -2[Mnz+] -0.15 mol%. When the ceramic was changed to a fine-grained insulator by high donor doping ([La3'] > 0.15 mol%), its semiconductivity was restored, and the relatively homogeneous, coarse-grained microstructure recurred by codoping with either Mg or Mn acceptor, with the transition at [La3+] -2[MgZ+] = 0.15 mol% or [La3+] -2[MnZ+] = 0.15 mol%. The analogy of a compensation effect between La-Mn-and La-Mg-codoped BaTi03 suggested that Mn acceptor added to BaTi03 exists as Mn2+ ion in the bulk grain region; its influence on the positive temperature coefficient of resistivity behavior is then discussed. [
Summary: A series of methacrylate copolymers containing polyhedral oligomeric silsesquioxane (POSS) was synthesized from the free radical copolymerization of methacrylic acid, methyl methacrylate, and isobutyl propylmethacryl polyhedral oligosilsesquioxanes, and then were modified with glycidyl methacrylate to serve as negative‐type photoresists. The UV/Vis spectroscopy reveals that the incorporation of POSS moiety into the copolymer results in a slight decrease in transparency from 99 to 92.5% (at wavelength = 365 nm). The photosensitivity in terms of resist sensitivity (D n0.5), contrast (γ), and photopolymerization rate are significantly increased with increase in the POSS content. In addition, the induction time is reduced from 0.520 to 0.515 min after incorporating the POSS unit based on photo‐DSC analyses. These observed results can be rationalized as due to hydrogen bonding interactions between siloxane and hydroxyl groups in copolymers which tend to attract the methacrylate double bonds surrounding POSS units to crosslink, thereby enhancing the photopolymerization rate and sensitivity. We further evaluate the lithographic property of a photoresist under a collimated exposure.
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