Strong piezoelectricity in nanosized silicon nitride prepared by laser-induced chemical vapor deposition

Wang, Weixiang; Dao-huo, LI; Liu, Zongcai; Liu, Songhao

doi:10.1063/1.108946

Cited by 10 publications

(1 citation statement)

References 2 publications

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“…Si 3 N 4 has been extensively used in microelectronics, optoelectronics, solar cells, machining tools, and the automotive industry because of its excellent physical properties. − It is well-known that the two stable phases (α and β) of Si 3 N 4 possess a hexagonal crystal structure in which all Si atoms are covalently bonded to N atoms in a tetrahedral structure . The third, low-compressibility, and superhard cubic spinel phase (γ-Si 3 N 4 ) was synthesized only in 1999, and its interesting properties were revealed by Ching et al through first-principles calculations.…”

Section: Introductionmentioning

confidence: 99%

Composition-Dependent Structural and Electronic Properties of α-(Si_1−xC_x)₃N₄

Duan

et al. 2011

J. Phys. Chem. C

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The highly unusual structural and electronic properties of the R-phase of (Si 1-x C x ) 3 N 4 are determined by density functional theory (DFT) calculations using the Generalized Gradient Approximation (GGA). The electronic properties of R-(Si 1-x C x ) 3 N 4 are found to be very close to those of R-C 3 N 4 . The bandgap of R-(Si 1-x C x ) 3 N 4 significantly decreases as C atoms are substituted by Si atoms (in most cases, smaller than that of either R-Si 3 N 4 or R-C 3 N 4 ) and attains a minimum when the ratio of C to Si is close to 2. On the other hand, the bulk modulus of R-(Si 1-x C x ) 3 N 4 is found to be closer to that of R-Si 3 N 4 than of R-C 3 N 4 . Plasma-assisted synthesis experiments of CN x and SiCN films are performed to verify the accuracy of the DFT calculations. TEM measurements confirm the calculated lattice constants, and FT-IR/XPS analysis confirms the formation and lengths of C-N and Si-N bonds. The results of DFT calculations are also in a remarkable agreement with the experiments of other authors.

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