Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering

Betti, A.; Fiori, Gianluca; Iannaccone, Giuseppe

doi:10.1063/1.3587627

Cited by 52 publications

(47 citation statements)

References 29 publications

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“…Moreover, the carrier mobility of GNRs (about hundreds of cm 2 /V·s [4,5]) is several magnitudes lower than that of graphene sheet due to the (intrinsic) band folding and phonon scattering [6] as well as (extrinsic) difficulty in controlling the edge quality in experiments [4,5]. Another way to open a band gap in graphene is breaking the inversion symmetry of the A, B sublattices, e.g., by placing graphene onto some special substrate.…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

Huang

Wei

2011

Phys. Rev. B

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Using physical insights and advanced first-principles calculations, we suggest that corundum (α-Al2O3) is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of ∼ 180 meV can be induced in graphene layer adsorbed on Al-terminated surface with an electron effective mass of ∼ 8 × 10 −3 me. Moreover, the band gaps of graphene/Al2O3 system could be tuned by an external electric field for practical applications.

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Section: Introductionmentioning

confidence: 99%

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

Huang

Wei

2011

Phys. Rev. B

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“…12 Theoretical studies indicated that lateral confinement might suppress the intrinsic mobility of graphene nanoribbons (GNRs) to be much lower than the impressive value for two-dimensional (2D) graphene. 13,14 Such an inverse relationship between mobility and bandgap generally exists in various semiconductors, 15 which is an inevitable problem for graphene's electronic applications.…”

Section: Introductionmentioning

confidence: 99%

Inverse relationship between carrier mobility and bandgap in graphene

Wang

Zhao

Yang

et al. 2013

The Journal of Chemical Physics

129

102

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A frequently stated advantage of gapless graphene is its high carrier mobility. However, when a nonzero bandgap is opened, the mobility drops dramatically. The hardness to achieve high mobility and large on/off ratio simultaneously limits the development of graphene electronics. To explore the underlying mechanism, we investigated the intrinsic mobility of armchair graphene nanoribbons (AGNRs) under phonon scattering by combining first-principles calculations and a tight-binding analysis. A linear dependence of the effective mass on bandgap was demonstrated to be responsible for the inverse mobility-gap relationship. The deformation-potential constant was found to be determined by the strain dependence of the Fermi energy and the bandgap, resulting in two mobility branches, and is essential for the high mobility of AGNRs. In addition, we showed that the transport polarity of AGNRs can be switched by applying a uniaxial strain.

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“…This also provides a possibility that an interesting transport characteristic can be observed on a different substrate other than SiO 2 . For example, there have been studies which incorporated a high-K material or hexagonal boron nitride on the substrate to identify the scattering mechanisms that limit the mobility [8][9][10][11]. Another way of modifying the substrate is to make nano-sized patterns with various geometries.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate

Khalil¹,

Kelekci²,

Noh³

et al. 2012

Journal of the Korean Vacuum Society

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We report on the measurements of electronic transport properties of CVD graphene placed on a pre-patterned substrate with periodic nano trenches. A strong anisotropy has been observed between the transport parallel and perpendicular to the trenches. Characteristically different weak localization corrections have been also observed when the transport was perpendicular to the trench, which is interpreted as due to a density inhomogeneity generated by the potential modulations.

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Strong mobility degradation in ideal graphene nanoribbons due to phonon scattering

Abstract: http://www.gianlucafiori.org/articles/betti_APL2011.pd

Cited by 52 publications

References 29 publications

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

Theoretical study of corundum as an ideal gate dielectric material for graphene transistors

Inverse relationship between carrier mobility and bandgap in graphene

Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate

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