Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structures

Chang, Jiho; Takai, Toshiaki; Godo, Kenji; Makino, Hisao; Goto, T.; Yao, Takafumi

doi:10.1016/s0022-0248(03)00975-8

Cited by 6 publications

(13 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Present study shows that emission in CdTe/ZnSe hetero-NCs arises from the recombination of carriers within an interfacial layer, which is formed along the core/shell interface due to the interdiffusion of Se and Zn ions into CdTe lattice during shell deposition. This type of electron−hole localization has been previously observed in CdTe/ZnSe quantum wells, where atomic interdiffusion at the junction of the two semiconductor thin films lead to the formation of an alloy layer emitting in the 520−600-nm range. , …”

Section: Introductionsupporting

confidence: 63%

Blue-Shifted Emission in CdTe/ZnSe Heterostructured Nanocrystals

2009

View full text Add to dashboard Cite

Properties of colloidal heterostructured nanocrystals are largely determined by the spatial distribution of photogenerated carriers across the junction of semiconductor materials that form the heterostructure. The two known types of carrier distributions are identified based on whether both carriers reside within the same (type I) or opposite (type II) sides of the heterojunction. Here we demonstrate the existence of another type of spatial carrier distribution in heteronanocrystals, which corresponds to the localization of both charges along the material junction. Such localization pattern was realized in novel CdTe/ZnSe heteronanocrystals, where the expected type I infrared emission was dominated by more intense photoluminescence in the 570-600 nm range, corresponding to the recombination of carriers within an interfacial alloy layer, formed by the cation and anion exchange between CdTe and ZnSe phases. Fabricated heteronanocrystals exhibit excellent optical characteristics including near-single-exponential lifetimes, enhanced emission stability, and fluorescence emission quantum yields of up to 24%.

show abstract

Section: Introductionsupporting

confidence: 63%

Blue-Shifted Emission in CdTe/ZnSe Heterostructured Nanocrystals

2009

View full text Add to dashboard Cite

show abstract

“…In reference 14, the Zn-stabled buffer and Teirradiation process was used. In other works, Cd was supplied first on the Se-stabled buffer [15]. Regardless of the growth processes, similar PL spectra were obtained.…”

Section: Introductionsupporting

confidence: 62%

“…However, in the CdTe/ZnSe heterostructure, which has a large conduction band (0.58 eV) and valence band off-set (0.61 eV) [11], the lattice mismatch between CdTe and ZnSe is approximately 14.4%. The large lattice mismatch leads to the Volmer-Weber (VW) growth mode, according to both theoretical calculation [12] and experimental data [13][14][15]. The carrier capture efficiency of SK dots exceeds that of VW dots.…”

Section: Introductionmentioning

confidence: 93%

See 1 more Smart Citation

Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

Yang

Lai

Chou

et al. 2007

Journal of Crystal Growth

View full text Add to dashboard Cite

“…[27][28][29] SME is achieved by depositing the more volatile constituents, sulfur and selenium, permanently, while group II constituents are deposited in a pulsed mode. 30 The SME process is shown in Fig. 30 The SME process is shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate

Huang

Weng

Ueng

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Initial growth stage evaluation of high quality ZnSe films deposited on a glass substrate was investigated. The self-limiting monolayer epitaxial process was used to pregrowth the buffer layer for a zinc selenide (ZnSe) film deposited. After alternating depositions for several cycles, the growth mode was changed to the molecular beam deposition mode under growth conditions. Films deposited at substrate temperatures of 250-350 degrees C and Se/Zn beam equivalent pressure ratios of 0.77-1.87 were investigated. The crystal structure and the preferred orientation of as-grown ZnSe films were examined using x-ray diffraction patterns. The optical properties of the ZnSe films were revealed by photoluminescence spectra. The characteristics of the ZnSe films with and without a buffer layer were compared and discussed in detail. Finally, the results demonstrate how the quality of ZnSe film can be improved on glass substrates for application to various devices

show abstract

Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structures

Cited by 6 publications

References 23 publications

Blue-Shifted Emission in CdTe/ZnSe Heterostructured Nanocrystals

Blue-Shifted Emission in CdTe/ZnSe Heterostructured Nanocrystals

Quasi-Stranski–Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy

Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate

Contact Info

Product

Resources

About