Strong interplay between dopant and SnO2 in amorphous transparent (Sn, Nb)O2 anode with high conductivity in electrochemical cycling

Zhang, Shilin; Zhang, Jinhua; Cao, Guoqin; Wang, Qian; Hu, Junhua; Zhang, Peng; Shao, Guosheng

doi:10.1016/j.jallcom.2017.12.021

Cited by 29 publications

(4 citation statements)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is in agreement with previous reports for Sn 4+ . These two peaks are clearly separated by the splitting energy of ≈8.4 eV, which is the representative value of Sn 4+ in SnS 2 . For the S element (Figure d), the high‐resolution XPS spectra displayed two spin–orbital coupling peaks centered at 162.7 and 161.5 eV, and these are characteristics for the 2p 1/2 and 2p 3/2 core levels, respectively .…”

supporting

confidence: 92%

SnS₂ Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

Wang

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

Recent advances in 2D transition metal dichalcogenides (TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and optoelectronics. Among these dichalcogenides, tin sulfide (SnS2) has received great attention due to its high optical absorption coefficient, high theoretical capacitance, high natural abundance of precursor chemicals, and minimal impact of these on the environment (green chemistry). It is crucial to obtain materials with varied morphologies because the chemical and physical properties are dependent on the morphology. The controlled synthesis of SnS2 with a specific morphology, a hollow sphere, is of significant interest. Herein, a facile, template‐free, one‐step solvothermal method to prepare SnS2 spheres with a hollow structure is demonstrated. The size of the SnS2 hollow spheres is uniform, at 2 μm in diameter, and the walls of the sphere are only 300 nm thick. The hollow structure forms due to the different specific surface energies of the SnS2 sheets and the fluorine‐doped tin oxide (FTO) substrate. Furthermore, the possible growth mechanism of these SnS2 hollow spheres is proposed, which may be applied to other 2D TMD systems.

show abstract

supporting

confidence: 92%

SnS₂ Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

Wang

et al. 2019

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…In recent years, a variety of transition‐metal dopants for SnO 2 were proposed in the literature; these can be divided into two groups: redox‐inactive and ‐active elements that can undergo conversion/alloying reactions with lithium ions in the potential range applicable for SnO 2 ‐based anodes . Niobium, titanium, zirconium, palladium, and tungsten can be assigned to the first group. Doping with these transition‐metal ions does not result in an observable gain in capacity because the lithiation/delithiation curves of SnO 2 anode materials remain unchanged, without additional redox features from the doping elements in the respective potential window.…”

Section: Doped Sno2 Lib Anodesmentioning

confidence: 99%

Tin Oxide Based Nanomaterials and Their Application as Anodes in Lithium‐Ion Batteries and Beyond

et al. 2019

View full text Add to dashboard Cite

Herein, recent progress in the field of tin oxide (SnO2)‐based nanosized and nanostructured materials as conversion and alloying/dealloying‐type anodes in lithium‐ion batteries and beyond (sodium‐ and potassium‐ion batteries) is briefly discussed. The first section addresses the importance of the initial SnO2 micro‐ and nanostructure on the conversion and alloying/dealloying reaction upon lithiation and its impact on the microstructure and cyclability of the anodes. A further section is dedicated to recent advances in the fabrication of diverse 0D to 3D nanostructures to overcome stability issues induced by large volume changes during cycling. Additionally, the role of doping on conductivity and synergistic effects of redox‐active and ‐inactive dopants on the reversible lithium‐storage capacity and rate capability are discussed. Furthermore, the synthesis and electrochemical properties of nanostructured SnO2/C composites are reviewed. The broad research spectrum of SnO2 anode materials is finally reflected in a brief overview of recent work published on Na‐ and K‐ion batteries.

show abstract

“…In this context, Nb incorporated SnO 2 (NTO) films have been investigated by different deposition methods such as chemical bath deposition [8], pulsed laser deposition [9], metal-organic chemical vapor deposition [10], atomic layer deposition [11], sputtering [12], spin-coating [13], spraypyrolysis [14], and dip-coating [15] for various applications. These reports experimentally confirmed that the incorporation of Nb atom modifies the electrical and optical properties of SnO 2 films.…”

Section: Introductionmentioning

confidence: 99%

Doped SnO₂ thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms

Gesesse,

Coutancier,

Katrib

et al. 2024

Nanotechnology

View full text Add to dashboard Cite

Nb-doped SnO2 (NTO) thin films were synthesized by atomic layer deposition technique at low temperature (100 °C). For an efficient incorporation of the Nb atoms, i.e. fine control of their amount and distribution, various supercycle ratios and precursor pulse sequences were explored. The thin film growth process studied by in-situ QCM revealed that the Nb incorporation is highly impacted by the surface nature as well as the amount of species available at the surface. This was confirmed by the actual concentration of the Nb atom incorporated inside the thin film as determined by XPS. Highly transparent thin films which transmit more than 95% of the AM1.5 global solar irradiance over a wide spectral range (300–1000 nm) were obtained. In addition, the Nb atoms influenced the optical band gap, conduction band, and valence band levels. While SnO2 thin film were too resistive, films tuned to conductive nature upon Nb incorporation with controlled concentration. Optimal incorporation level was found to be ⩽1 at.% of Nb, and carrier concentration reached up 2.5 × 1018 cm−3 for the as-deposited thin films. As a result, the high optical transparency accompanied with tuned electrical property of NTO thin films fabricated by ALD at low temperature paves the way for their integration into temperature-sensitive, nanostructured optoelectrical devices.

show abstract

Strong interplay between dopant and SnO2 in amorphous transparent (Sn, Nb)O2 anode with high conductivity in electrochemical cycling

Cited by 29 publications

References 72 publications

SnS₂ Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

SnS₂ Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

Tin Oxide Based Nanomaterials and Their Application as Anodes in Lithium‐Ion Batteries and Beyond

Doped SnO₂ thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms

Contact Info

Product

Resources

About

Strong interplay between dopant and SnO2 in amorphous transparent (Sn, Nb)O2 anode with high conductivity in electrochemical cycling

Cited by 29 publications

References 72 publications

SnS2 Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

SnS2 Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

Tin Oxide Based Nanomaterials and Their Application as Anodes in Lithium‐Ion Batteries and Beyond

Doped SnO2 thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms

Contact Info

Product

Resources

About

SnS₂ Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

SnS₂ Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

Doped SnO₂ thin films fabricated at low temperature by atomic layer deposition with a precise incorporation of niobium atoms