Strong Hot Carrier Effects in Single Nanowire Heterostructures

Shojaei, Iraj Abbasian; Linser, Samuel; Jnawali, Giriraj; Wickramasuriya, Nadeeka; Jackson, Howard E.; Smith, L. M.; Kargar, Fariborz; Balandin, Alexander A.; Yuan, Xiaoming; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1021/acs.nanolett.9b01345

Cited by 14 publications

(20 citation statements)

References 50 publications

(118 reference statements)

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“…3(c). 18 The energy loss rate due to optical phonons was found to decrease by an order of magnitude at 300 K for nanowires with the InP shell (and more than two orders at 10 K). While this is indeed a noticeable change, it remains unclear if this increase is due to extra functionality enabled by the shell itself, or due to hot-carrier lifetimes being typically longer in InP than in GaAs, assuming the GaAsSb properties are close to those for GaAs.…”

Section: Iva Ultra-fast Probing Of Carrier Relaxationmentioning

confidence: 97%

Section: Iva Ultra-fast Probing Of Carrier Relaxationmentioning

confidence: 99%

“…15 Lately, intriguing reports have emerged suggesting that the dynamics of hot carriers might be altered in semiconducting nanowires, due to their shape and dimensionality. [16][17][18] A nanowire is defined as a rod like structure with a high length/diameter aspect ratio, and a diameter on the order of 1-100 nm. Nanowires have been the subject of intense research interest, due to their novel and tailorable optical, electronic, and thermal properties, 19 and because nanowire synthesis provides a platform for flexible and high-quality band-engineering.…”

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Hot-carrier optoelectronic devices based on semiconductor nanowires

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Aeberhard

Bremner

et al. 2021

Applied Physics Reviews

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In optoelectronic devices such as solar cells and photodetectors, a portion of electron-hole pairs are generated as so-called hot carriers with an excess kinetic energy that is typically lost as heat. The long standing aim to harvest this excess energy to enhance device performance has proven to be very challenging, largely due to the extremely short-lived nature of hot carriers. Efforts thus focus on increasing the hot carrier relaxation time, and on tailoring heterostructures that allow for hot-carrier extraction on short time-and length-scales. Recently, semiconductor nanowires have emerged as a promising system to achieve these aims, because they offer unique opportunities for heterostructure engineering as well as for potentially modified phononic properties that can lead to increased relaxation times. In this review we assess the current state of theory and experiments relating to hot-carrier dynamics in nanowires, with a focus on hot-carrier photovoltaics. To provide a foundation, we begin with a brief overview of the fundamental processes involved in hot-carrier relaxation, and how these can be tailored and characterized in nanowires. We then analyze the advantages offered by nanowires as a system for hot-carrier devices and review the status of proof-of-principle experiments related to hot-carrier photovoltaics. To help interpret existing experiments on photocurrent extraction in nanowires we provide modeling based on non-equilibrium Green's functions. Finally, we identify open research questions that need to be answered in order to fully evaluate the potential nanowires offer towards achieving more efficient, hotcarrier based, optoelectronic devices.

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Section: Iva Ultra-fast Probing Of Carrier Relaxationmentioning

confidence: 97%

Section: Iva Ultra-fast Probing Of Carrier Relaxationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Hot-carrier optoelectronic devices based on semiconductor nanowires

Fast

Aeberhard

Bremner

et al. 2021

Applied Physics Reviews

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“…Despite the extensive work on the topic, most studies involved only a macroscopic description of the problem, while the fewer existing state-of-the-art modelling of the NESS have several limitations. First, the tenet that the photo-excited HCs ultimately achieve the lattice temperature in the steady-state [31] has been challenged in a recent experiment on group III-V semiconductors; it unveils that in the NESS carrier temperatures can be much higher than lattice temperature [32][33][34][35]. A theoretical understanding of the existence of such a high carrier-temperature in NESS is still lacking [32][33][34][35], especially in light of the different techniques available for measuring the various temperatures.…”

Section: Introductionmentioning

confidence: 99%

Theory of non-equilibrium ‘hot’ carriers in direct band-gap semiconductors under continuous illumination

Sarkar

Sivan

2022

New J. Phys.

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The interplay between the illuminated excitation of carriers and subsequent thermalization and recombination leads to the formation of non-equilibrium distributions for the ``hot'' carriers and to heating of both electrons, holes and phonons. In spite of the fundamental and practical importance of these processes, there is no theoretical framework which encompasses all of them and provides a clear prediction for the non-equilibrium carrier distributions. Here, a self-consistent theory accounting for the interplay between excitation, thermalization, and recombination in continuously-illuminated semiconductors is presented, enabling the calculation of non-equilibrium carrier distributions. We show that counter-intuitively, distributions deviate more from equilibrium under weak illumination than at high intensities. We mimic two experimental procedures to extract the carrier temperatures and show that they yield different dependence on illumination. Finally, we provide an accurate way to evaluate photoluminescence efficiency, which, unlike conventional models, predicts correctly the experimental results. These results provide a starting point towards examining how non-equilibrium features will affect properties hot-carrier based application.

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Hollow Cobalt Oxide/Carbon Hybrids Aid Metabolic Encoding for Active Systemic Lupus Erythematosus during Pregnancy

Wang

Shu

Lin

et al. 2022

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A noninvasive, easy operation, and accurate diagnostic protocol is highly demanded to assess systemic lupus erythematosus (SLE) activity during pregnancy, promising real‐time activity monitoring during the whole gestational period to reduce adverse pregnancy outcomes. Here, machine learning of serum metabolic fingerprints (SMFs) is developed to assess the SLE activity for pregnant women. The SMFs are directly extracted through a hollow‐cobalt oxide/carbon (Co3O4/C)‐composite‐assisted laser desorption/ionization mass spectrometer (LDI MS) platform. The Co3O4/C composite owns enhanced light absorption, size‐selective trapping, and better charge–hole separation, enabling improved ionization efficiency and selectivity for LDI MS detection toward small molecules. Metabolic fingerprints are collected from ≈0.1 µL serum within 1 s without enrichment and encoded by the optimized elastic net algorithm. The averaged area under the curve (AUC) value in the differentiation of active SLE from inactive SLE and healthy controls reaches 0.985 and 0.990, respectively. Further, a simplified panel based on four identified metabolites is built to distinguish SLE flares in pregnant women with the highest AUC value of 0.875 for the blind test. This work sets an accurate and practical protocol for SLE activity assessment during pregnancy, promoting precision diagnosis of disease status transitions in clinics.

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Strong Hot Carrier Effects in Single Nanowire Heterostructures

Cited by 14 publications

References 50 publications

Hot-carrier optoelectronic devices based on semiconductor nanowires

Hot-carrier optoelectronic devices based on semiconductor nanowires

Theory of non-equilibrium ‘hot’ carriers in direct band-gap semiconductors under continuous illumination

Hollow Cobalt Oxide/Carbon Hybrids Aid Metabolic Encoding for Active Systemic Lupus Erythematosus during Pregnancy

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