Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

Abstract

Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al 0.3 Ga 0.7 As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.