Strong Efficiency Improvement of SOI-LEDs Through Carrier Confinement

Abstract

Abstract-Contemporary silicon light-emitting diodes in silicon-on-insulator (SOI) technology suffer from poor efficiency compared to their bulk-silicon counterparts. In this letter, we present a new device structure where the carrier injection takes place through silicon slabs of only a few nanometer thick. Its external quantum efficiency of 1.4 · 10 −4 at room temperature, with a spectrum peaking at 1130 nm, is almost two orders higher than reported thus far on SOI. The structure diminishes the dominant role of nonradiative recombination at the n + and p + contacts, by confining the injected carriers in an SOI peninsula. With this approach, a compact infrared light source can be fabricated using standard semiconductor processing steps.

Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs

“…The measured devices are longchannel (100) silicon-on-insulator (SOI) MOSFETs [26] with the backside of the wafer as back-gate contact (denoted as SOIDG); t Si ranges from 27 nm down to 5 nm, the channel length is 25 μm, and the oxide and buried oxide (BOX) thicknesses are 25 and 400 nm, respectively (i.e., t oxf and t oxb , respectively). Fig.…”

Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs

“…The back of the wafer serves as back-gate contact. The device fabrication is documented in [11]. A schematic cross section is shown in Fig.…”

Silicon‐Based Light Sources for Silicon Integrated Circuits

“…In early 2000's, a series of papers appeared, which questioned the common belief that Si cannot be used to form a laser [13][14][15][16][17][18][19]. In October 2004, the first report on an Si laser appeared [20][21][22], while in February 2005 the first CW Raman laser integrated in Si was reported [23][24][25].…”