Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode

An, Namhyun; Jeong, Seock-Jin; K, Soon-Hong; Kwon, Soonki; Lee, Jisu; Lee, Seung Joo; Kim, Deuk Young; Lee, Sejoon

doi:10.1016/j.cap.2017.02.001

Cited by 16 publications

(8 citation statements)

References 38 publications

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“…Among various graphene-based hetero-architectures, the graphene/inorganic semiconductor contacts have attracted much attention because of their ample potential for high-performance Schottky photodiodes (PDs) [4]. For example, the enhanced photoresponse characteristics with high sensitivity and fast response were demonstrated on various graphene-based Schottky PDs that were composed of typical inorganic semiconductor materials (e.g., Si [5,6], Ge [7], GaAs [8,9], CdSe [10], ZnO [11,12,13,14,15,16,17,18,19,20,21], etc.). Among them, ZnO is one of the most prospective materials for high-performance ultraviolet (UV) PDs because of its wide band gap and excitonic properties [22,23].…”

Section: Introductionmentioning

confidence: 99%

“…Among them, ZnO is one of the most prospective materials for high-performance ultraviolet (UV) PDs because of its wide band gap and excitonic properties [22,23]. Due to the c -axis preference of wurtzite ZnO, moreover, ZnO thin films [18,19] or ZnO nanorods [20] can be easily grown on the defective graphene sheet that had been grown using chemical vapor deposition (CVD). Namely, the presence of C–O nucleation sites on CVD graphene allows us to fabricate a simple device scheme of the graphene/ZnO Schottky PD through the direct growth of ZnO on graphene.…”

Section: Introductionmentioning

confidence: 99%

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Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

2019

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The low-power, high-performance graphene/ZnO Schottky photodiodes were demonstrated through the direct sputter-growth of ZnO onto the thermally-cleaned graphene/SiO2/Si substrate at room temperature. Prior to the growth of ZnO, a thermal treatment of the graphene surface was performed at 280 °C for 10 min in a vacuum to desorb chemical residues that may serve as trap sites at the interface between graphene and ZnO. The device clearly showed a rectifying behavior with the Schottky barrier of ≈0.61 eV and an ideality factor of 1.16. Under UV illumination, the device exhibited the excellent photoresponse characteristics in both forward and reverse bias regions. When illuminating UV light with the optical power density of 0.62 mW/cm2, the device revealed a high on/off current ratio of >103 even at a low bias voltage of 0.1 V. For the transient characteristics upon switching of UV light pulses, the device represented a fast and stable photoresponse (i.e., rise time: 0.16 s, decay time: 0.19 s). From the temperature-dependent current–voltage characteristics, such an outstanding photoresponse characteristic was found to arise from the enhanced Schottky barrier homogeneity via the thermal treatment of the graphene surface. The results suggest that the ZnO/graphene Schottky diode holds promise for the application in high-performance low-power UV photodetectors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

2019

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“…As a result, photodetectors that combine ZnO and graphene have been studied recently by many research groups. A wide assortment of ZnO structures has been studied for UV photodetection, including nanoparticles [ 11 , 12 , 13 , 14 , 15 ], nanowires [ 16 , 17 , 18 , 19 ], and thin films [ 20 , 21 , 22 , 23 ]. Because of the unique properties afforded by nanoscale structures, an optimal size is achieved when the ZnO nanostructures approach the Debye length, which is on the order of ~18 nm [ 24 ].…”

Section: Introductionmentioning

confidence: 99%

ZnO Nanoparticle/Graphene Hybrid Photodetectors via Laser Fragmentation in Liquid

et al. 2020

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By combining the enhanced photosensitive properties of zinc oxide nanoparticles and the excellent transport characteristics of graphene, UV-sensitive, solar-blind hybrid optoelectronic devices have been demonstrated. These hybrid devices offer high responsivity and gain, making them well suited for photodetector applications. Here, we report a hybrid ZnO nanoparticle/graphene phototransistor that exhibits a responsivity up to 4 × 104 AW−1 and gain of up to 1.3 × 105 with high UV wavelength selectivity. ZnO nanoparticles were synthesized by pulsed laser fragmentation in liquid to attain a simple, efficient, ligand-free method for nanoparticle fabrication. By combining simple fabrication processes with a promising device architecture, highly sensitive ZnO nanoparticle/graphene UV photodetectors were successfully demonstrated.

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“…In addition, ZnO is highly compatible with other materials and it can be categorized into two different aspects. One is an availability for the easy growth of single-crystalline ZnO; i.e., high-quality ZnO can be effectively grown on every substrate such as Si [25,26], GaN [27,28], glass [29], plastic substrates [30,31], and graphene [32][33][34]. Among various possible substrates, particularly, Figure 1 displays the schematic illustrations of the device fabrication procedure.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, ZnO is highly compatible with other materials and it can be categorized into two different aspects. One is an availability for the easy growth of single-crystalline ZnO; i.e., high-quality ZnO can be effectively grown on every substrate such as Si [ 25 , 26 ], GaN [ 27 , 28 ], glass [ 29 ], plastic substrates [ 30 , 31 ], and graphene [ 32 , 33 , 34 ]. Among various possible substrates, particularly, 2-dimensional graphene offers a special benefit because high-quality ZnO could be directly grown on graphene due to its honeycomb lattices, which act as the seed sites for nucleation of wurtzite ZnO [ 33 , 34 , 35 ].…”

Section: Introductionmentioning

confidence: 99%

Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure

Lee

Kim

et al. 2020

Nanomaterials

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The highly sensitive ultra-violet (UV) photodiode was demonstrated on the organic-inorganic hybrid heterostructure of β-phase p-type polyfluorene (PFO)/n-type yttrium-doped zinc oxide nanorods (YZO-NRs). The device was fabricated through a simple fabrication technique of β-phase PFO coating onto YZO-NRs that had been directly grown on graphene by the hydrothermal synthesis method. Under UV illumination (λ = 365 nm), the device clearly showed excellent photoresponse characteristics (e.g., high quantum efficiency ~690%, high photodetectivity ~3.34 × 1012 cm·Hz1/2·W−1, and fast response time ~0.17 s). Furthermore, the ratio of the photo current-to-dark current exceeds 103 even under UV illumination with a small optical power density of 0.6 mW/cm2. We attribute such superb photoresponse characteristics to both Y incorporation into YZO-NRs and conformation of β-phase PFO. Namely, Y dopants could effectively reduce surface states at YZO-NRs, and β-phase PFO might increase the photocarrier conductivity in PFO. The results suggest that the β-phase p-PFO/n-YZO-NR hybrid heterostructure holds promise for high-performance UV photodetectors.

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Strong dependence of photocurrent on illumination-light colors for ZnO/graphene Schottky diode

Cited by 16 publications

References 38 publications

Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity

ZnO Nanoparticle/Graphene Hybrid Photodetectors via Laser Fragmentation in Liquid

Highly Sensitive UV Photodiode Composed of β-Polyfluorene/YZnO Nanorod Organic-Inorganic Hybrid Heterostructure

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