Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Dusch, Yannick; Tiercelin, Nicolas; Klimov, A. A.; Giordano, Stefano; Preobrazhensky, V.; Pernod, Philippe

doi:10.1063/1.4795440

Cited by 43 publications

(28 citation statements)

References 16 publications

(13 reference statements)

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“…Whereas, if the magnetostriction effect of FM subsystem is induced by the interface strain, the strainmediated magnetoelectric interaction would play a dominant role in the CME. [11][12][13] In experiment, due to the piezoelectric effect of the ferroelectric relaxor substrate, 14 an anisotropic stress can be created in the FM film by applying voltage across the heterostructure. Consequently, we have an electric control of uniaxial magnetic anisotropy, which is the key issue for the future development of low-power spintronic devices based on the CME.…”

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confidence: 99%

Piezoelectric control of magnetic dynamics in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

Wang

Zhou

Zhang

et al. 2014

Applied Physics Letters

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A microstrip method with vector network analyzer was used to investigate electric field control of magnetic dynamic properties in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. Under external electric field, the natural resonance frequency and permeability of the Co film were found to modulate between 1.8–2.8 GHz and 50–150, respectively. In addition, the in-plane uniaxial magnetic anisotropy field can also be electrically tuned from 54 to 170 Oe, while the ferromagnetic resonance field was substantially enhanced about 350 Oe as well. Such an improvement of magnetic anisotropy is desirable for effectively electric control of resonance frequency and permeability in low energy microwave devices.

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confidence: 99%

Piezoelectric control of magnetic dynamics in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

Wang

Zhou

Zhang

et al. 2014

Applied Physics Letters

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“…For the multilayers consisting of PZT and PZN-PT, the E-related K eff may be expressed by Eqs. (8) and (9), respectively,…”

Section: Resultsmentioning

confidence: 98%

Electric field control of exchange-spring behavior

Zhang

Zhou

Ding

et al. 2015

Journal of Applied Physics

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We study the electric field control of exchange-spring (ES) behavior in a piezoelectric/ES multi-layer using the micromagnetic simulation method. In the composite, PZT or PZN-PT forms the piezoelectric substrate, while the ES bilayer is composed of hard-magnetic (HM) CoFe2O4 (CFO) and soft-magnetic (SM) Fe3O4 or Co43Fe43B14 materials. The stress as a function of electric-field strength (E) and the external magnetic field was set to align in plane. The results reveal an E-sensitive magnetic property in the PZN-PT/Co43Fe43B14/CFO system. The ES bilayer in this system experienced a transition from rigid magnetism to ES behavior with E changing from 2 MV/m to −2 MV/m. The E-related nucleation field and switching field exhibit strong dependences on the thickness ratio between the HM and SM phases. Additionally, when the magnetic field was applied at an acute angle to the easy axis of the HM or the SM phase, a multi-jump hysteresis loop was observed under a negative E bias. These results may be attributed to a change in the effective magnetic anisotropy constant resulting from the transfer of stress from the piezoelectric substrate to the ES bilayer under an electric field.

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“…The different normalized remanent magnetization of 30% and 73% are obtained after applying two different E-field pulses (5kV/cm and -2kV/cm), suggesting the E-field induced magnetization switching is nonvolatile. Combined with the large AMR effect in CoNi thin films, the E-field induced magnetization switching paves a new way for fabrication of voltage-write magnetic random memory devices [19], [20]. …”

Section: Resultsmentioning

confidence: 99%

The E-Field-Induced Volatile and Nonvolatile Magnetization Switching of CoNi Thin Films in CoNi/PMN-PT Heterostructures

et al. 2015

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In this work，we report the giant electric-field (E-field) induced magnetic anisotropy and magnetization switching in CoNi/Pb(Mg 1/3 Nb 2/3 )O 3 -xPbTiO 3 (PMN-PT) magnetoelectric heterostructures. For CoNi/PMN-30%PT, the E-field induced anisotropy shows a volatile behavior; whereas for CoNi/PMN-32%PT, a large and nonvolatile E-field induced anisotropy field up to 54kA/m is observed. These behaviors can be understood by measuring the strain vs E-field curves of two kinds of substrates. On the basis of the E-field induced nonvolatile magnetic switching, two stable magnetization states defined by applying E-field pulses were demonstrated in CoNi/PMN-32%PT heterostructure, which paves a new way for voltage-write magnetic random memory devices.Index Terms-ME effect, strain, volatile, nonvolatile

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Stress-mediated magnetoelectric memory effect with uni-axial TbCo2/FeCo multilayer on 011-cut PMN-PT ferroelectric relaxor

Cited by 43 publications

References 16 publications

Piezoelectric control of magnetic dynamics in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

Piezoelectric control of magnetic dynamics in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

Electric field control of exchange-spring behavior

The E-Field-Induced Volatile and Nonvolatile Magnetization Switching of CoNi Thin Films in CoNi/PMN-PT Heterostructures

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