Piezoelectric control of magnetic dynamics in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure

Abstract

A microstrip method with vector network analyzer was used to investigate electric field control of magnetic dynamic properties in Co/Pb(Mg1/3Nb2/3)O3-PbTiO3 heterostructure at room temperature. Under external electric field, the natural resonance frequency and permeability of the Co film were found to modulate between 1.8–2.8 GHz and 50–150, respectively. In addition, the in-plane uniaxial magnetic anisotropy field can also be electrically tuned from 54 to 170 Oe, while the ferromagnetic resonance field was substantially enhanced about 350 Oe as well. Such an improvement of magnetic anisotropy is desirable for effectively electric control of resonance frequency and permeability in low energy microwave devices.

Reversible and Nonvolatile Modulations of Magnetization Switching Characteristic and Domain Configuration in L10-FePt Films via Nonelectrically Controlled Strain Engineering

“…Furthermore, because the maximum deformation magnitude of ferroelectrics is usually below 1%, , the transferrable lattice strain in the attached film is normally limited to be less than 0.5%. The strain induced magnetoelastic energy to the film (∼10 4 J/m 3 ) can only achieve values comparable to the magnetocrystalline anisotropy energy of low K u materials such as Ni, Co, CoFe, ,, the effective H C tunability in large K u materials , is very limited. The achievable lattice strain, H C variation, and sensitivity of H C change to strain level in some typical magnetic materials deposited on ferroelectric substrates ,,,, are summarized in Figure S1.…”

“…The strain induced magnetoelastic energy to the film (∼10 4 J/m 3 ) can only achieve values comparable to the magnetocrystalline anisotropy energy of low K u materials such as Ni, Co, CoFe, ,, the effective H C tunability in large K u materials , is very limited. The achievable lattice strain, H C variation, and sensitivity of H C change to strain level in some typical magnetic materials deposited on ferroelectric substrates ,,,, are summarized in Figure S1. Thus, for high K u thin films including the L1 0 -FePt, it is still challenging to generate significantly large lattice strains to realize noticeable H C modulation with nonvolatility and reversibility.…”

Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure

“…Therefore, in electric-field magnetism modulation, a non-volatile change in magnetization at room temperature is readily expected. Previous researchers have accordingly attempted to develop non-volatile piezostrain-mediated electric field magnetization control techniques1922232425 and been mildly successful, however, for high-density information storage, a non-volatile, multi-state memory with sufficiently large converse ME by electric impulses in multiferroic material has been elusive. Jiang et al .…”

Long‐Range Nonvolatile Electric Field Effect in Epitaxial Fe/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 Heterostructures

“…In general, in the Fe (4, 15, and 30 nm)/PMN‐PT heterostructure, coexistence of a piezostrain and a charge effect is expected. Based on our previous reports, the piezostrain effect originates in the ferroelectric substrate and can be transferred to the ferromagnetic thin film to mediate the magnetic parameters so that the dependence of these parameters on the applied electric field always shows butterfly‐like characteristics. From this aspect, if the piezostrain effect has a dominant role in the system, the strain‐electric field ( S – E ) curve having a butterfly‐like characteristics, as shown in Figure S3a of the Supporting Information, can lead to a similar butterfly‐like H r – E curve.…”