Stress Management in Sub-90-nm Transistor Architecture

Arghavani, Reza; Yuan, Zhibo; Ingle, Nilesh P.; Jung, K. B.; Seamons, Martin; Venkataraman, S.; Banthia, V.; Lilja, K.; Leon, P.; Karunasiri, Gamani; Yoon, Seok–Jin; Mascarenhas, A.

doi:10.1109/ted.2004.835993

Cited by 41 publications

(24 citation statements)

References 12 publications

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“…The STI structure was filled with tetraetho xysilane-based film, which loaded the tensile stress into the active area [4]. Formation of the transistor gates was followed by impurity doping.…”

Section: Logic Devicesmentioning

confidence: 99%

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Stress-induced voiding in nickel silicide

Futase¹,

Oashi²,

Maeda³

et al. 2013

Microelectronic Engineering

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Section: Logic Devicesmentioning

confidence: 99%

“…This is done by using low-resistan ce nickel monosilicide (NiSi) film as the transistor electrode material [1][2][3]. In addition, a shallow trench isolation (STI) structure straining the channel is used to enhance the drive current [4]. Aluminum and copper are widely used as the interconnec t material [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Stress-induced voiding in nickel silicide

Futase¹,

Oashi²,

Maeda³

et al. 2013

Microelectronic Engineering

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“…Hydrogen incorporation into SiN is known to generate Si-H bonds and reduces the strength of the remaining Si-N bonds attached to the Si atom. 5,14 As the Si-N bond length increases, tensile stress is introduced. In the present experiments, the observed expansion of the matrix structure ͑the lifetime distribution at 0.2-1 ns͒ was attributable to the effect of hydrogen on Si-N bonds.…”

Section: Open Volumes In Sin Films For Strained Si Transistors Probedmentioning

confidence: 99%

Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams

Uedono

Ikeuchi

Otsuka

et al. 2006

Applied Physics Letters

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Open volumes in strained SiN films deposited on Si substrates by microwave plasma enhanced chemical vapor deposition were probed using monoenergetic positron beams. Positrons were found to annihilate from the trapped state by open volumes which exist intrinsically in amorphous structures of SiN. The formation of positronium atoms in large open volumes was observed. From their lifetimes, the estimated mean size of such volumes was 0.02–0.5nm3. A clear correlation between the size distribution of open volumes and the stress in the substrate was obtained. The relationship between the open volumes and impurities in the films is also discussed.

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“…The electron mobility enhancement is explored by considering Fig. 3 The doping distribution and refined mesh for the 3D simulation of the strained (a) bulk and (b) SOI FinFETs the six-fold degeneracy in the conduction band [15][16][17]. The hole dependence on the strain is mainly due to a redistribution of holes between the light and heavy valleys.…”

Section: Computational Modelmentioning

confidence: 99%

Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

2006

J Comput Electron

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In this paper, electrical characteristics of 25 nm strained fin-typed field effect transistors (FinFETs) with oxide-nitride-stacked-capping layer are numerically studied. The FinFETs are fabricated on two different wafers, one is bulk silicon and the other is silicon-on-insulator (SOI) substrate. A three-dimensional device simulation is performed by solving a set of density-gradient-hydrodynamic equations to study device performance including, such as the drain current characteristics (the I D -V G and I D -V D curves), the drain-induced barrier height lowering, and the subthreshold swing. Comparison between the strained bulk and SOI FinFETs shows that the strained bulk FinFET is promising for emerging multiple-gate nanodevice era according to the manufacturability point of view.

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Stress Management in Sub-90-nm Transistor Architecture

Cited by 41 publications

References 12 publications

Stress-induced voiding in nickel silicide

Stress-induced voiding in nickel silicide

Open volumes in SiN films for strained Si transistors probed using monoenergetic positron beams

Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

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