Stress-induced voiding in stacked tungsten via structure

Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

“…Even though this array design and neutral mechanical plane layout reduce the probability of failure by fracture, it is possible that extended cycling to levels of stretching that cause significant strain in the metal could lead to failures via well known mechanisms such as stress voiding, creep and others. 5 Cycling tests of 30 times on related devices by two dimensional thermal stretching up to ϳ3.9% and releasing showed minimal changes ͑Ͻ ϳ 15% in electrical properties͒. 2 Other more recent tests show little degradation for Ͼ1000 cycles.…”