This report deals with the analysis of point‐defect‐induced magnetic after‐effect (MAE) processes occurring in as‐grown, single‐crystalline titano‐magnetite (Fe2.8–D Ti0.2O4), containing B‐site vacancies (D < 0.005). In a foregoing experiment, these processes, situated near 450 K, 200 K and 65 K, have been completely recovered in the course of systematic annealing up to Ta ≤ 1200 K. Analysis of respective annealing kinetics suggested to associate them with vacancy‐ (450 K) and interstitial‐based (200 K) defect reorientations, including modified electron hopping (65 K). The present study was performed in order to check the previously developed relaxation model by low‐temperature (80 K) electron (e–) irradiation of the prerecovered crystal and investigating if thereby the point‐defect relaxations of the initial, as‐grown, state could be reconstituted. MAE analyses, based on systematic sample annealing in the temperature range 80 K ≤ Ta ≤ 1200 K prove, indeed, radiation‐induced reproduction of related processes. Partial modifications of respective process genealogies may be conveniently assigned to the alternative techniques of defect induction, i.e. high‐temperature crystal growth in thermal equilibrium or out‐of‐equilibrium, low‐temperature e–‐irradiation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)