Stress in silicon at Si3N4/SiO2 film edges and viscoelastic behavior of SiO2 films

Isomae, Seiichi

doi:10.1063/1.334791

Cited by 45 publications

(8 citation statements)

References 21 publications

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“…The glide systems of a silicon crystal are known as the {111} glide planes and the 〈110〉 glide directions. Since the silicon substrate for a semiconductor device is made from a single crystal and the surface is always {001} orientated, the resolved shear stress τ RSS is given by the following formula, 2 …”

Section: Resultsmentioning

confidence: 99%

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A ball‐indentation method to evaluate the critical stress for dislocation generation in a silicon substrate

Ohta

Miura

Kitano

2001

Fatigue Fract Eng Mat Struct

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Although silicon substrates for semiconductor devices do not contain any dislocations initially, the thin‐film stresses sometimes produce dislocations during fabricating processes. Since the dislocations degrade electrical characteristics, it is important to estimate the critical stress for dislocation generation in order to maintain the integrity and reliability of the device. Therefore, we have developed a method that uses a ball‐press test for evaluating the critical stress for dislocation generation. The critical stress is calculated from the critical press load for dislocation generation. We used this test method to determine the temperature dependence of the critical stress, and found that the change of the critical stress with temperature is not so large when compared with that of the reference tensile test data. This is because, since the tensile specimen contains some dislocations or initial damage, the tensile test data probably includes the influence of the movement of these dislocations. Furthermore, the effect of ion implantation was examined and this makes clear that the critical stress of implanted specimen is decreased.

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Section: Resultsmentioning

confidence: 99%

“…In these fabrication processes, several high‐temperature annealing steps up to 1000 °C are applied to stabilize the thin‐film characteristics. During these annealing steps, the intrinsic stress and thermal stress of the films sometimes produce dislocations 1–3 …”

Section: Introductionmentioning

confidence: 99%

A ball‐indentation method to evaluate the critical stress for dislocation generation in a silicon substrate

Ohta

Miura

Kitano

2001

Fatigue Fract Eng Mat Struct

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“…Hence there is little experimental data available with which to compare the results we obtain with this particular geometry, which was chosen as a starting point because of its relative simplicity. Isomae 33,34 has studied the appearance of dislocations on wafers patterned with silicon FIG. 18.…”

Section: Discussionmentioning

confidence: 99%

Dislocation dynamics near film edges and corners in silicon

Schwarz

Chidambarrao

1999

Journal of Applied Physics

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Articles you may be interested inDislocation nucleation on a near surface void leading to surface protrusion growth under an external electric field The effect of film edge and corner stress fields on the behavior of dislocations in silicon is investigated. Stresses arising from a silicon-nitride film pad on a silicon substrate are calculated using the finite element method, and the resulting spatially varying stress-tensor components are utilized to drive numerical simulations of dislocation behavior. The dislocation dynamics code involves a full three-dimensional implementation of the Peach-Koehler force formalism. By studying the motion of dislocations on various slip systems in various locations relative to the nitride pad, we are able to determine the stationary dislocation configurations which can be achieved in this geometry. The zero resolved-stress contours near the silicon surface are shown to be a useful tool for understanding both the nature of the dislocation propagation as well as the final dislocation configurations. We examine the nucleation of dislocations qualitatively from the critical-radius point of view, and identify the ''hot spots'' for nucleation near the nitride film edge. Thicker nitride films are found to have a greater number of possible nucleation sites, and a greater variety of possible stable configurations, as experimentally observed. The simulations are extended to study the effect of changing the pad edge orientation relative to the silicon lattice. Finally, we demonstrate the usefulness and power of these techniques in handling more complex situations by illustrating the types of behavior resulting from cross-slip, reconnection between dislocations nucleated on intersecting glide planes, Frank-Read spiral sources, and traveling dislocations interacting with nitride edges.

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“…Figure illustrates the growth process of the GaN epi‐structure on a compliant substrate. As the SOI substrate is heated up, SiO 2 becomes viscoelastic so that the top thin Si device layer becomes compliant and flexible, to absorb the large strain caused by the GaN epitaxial layer. As the substrate temperature decreases after the completion of epi‐growth, the top Si layer and the bottom Si handling wafer are bonded together again by the SiO 2 layer.…”

Section: Platforms For Heterogeneous Integrationmentioning

confidence: 99%

Technology for III‐N heterogeneous mixed‐signal electronics

Chen

Kwan

Jiang

2014

Physica Status Solidi (a)

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III‐N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed‐signal electronics with sensing, protection, and control functions could provide optimized performance, increased functionality, and enhanced reliability. This paper addresses the technology to discuss the technology options of implementing III‐N mixed‐signal circuits, and then reviews the recent progress in the expansion of design library, based on monolithically integrated enhancement/depletion (E/D)‐mode AlGaN/GaN HEMTs on GaN‐on‐silicon substrates. An integrated GaN proportional‐to‐absolute‐temperature (PTAT) voltage source.

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Stress in silicon at Si3N4/SiO2 film edges and viscoelastic behavior of SiO2 films

Abstract: interface effect on the magnetic behavior of quenchcondensed Ni films

Cited by 45 publications

References 21 publications

A ball‐indentation method to evaluate the critical stress for dislocation generation in a silicon substrate

A ball‐indentation method to evaluate the critical stress for dislocation generation in a silicon substrate

Dislocation dynamics near film edges and corners in silicon

Technology for III‐N heterogeneous mixed‐signal electronics

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