1992
DOI: 10.1143/jjap.31.751
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Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors

Abstract: The effect of stress on the current-induced degradation of current-voltage characteristics in AlGaAs/GaAs heterojunction bipolar transistors with Be-doped base layers is investigated. Transistors with different orientations of the emitter mesa and different thicknesses of the passivation film are bias tested at room temperature. The results are compared with the stress distributions along the emitter-base junction obtained from a two-dimensional calculation using the boundary element method. It is found that t… Show more

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Cited by 20 publications
(4 citation statements)
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“…. [12] For N E = 7x10 17 cm -3 , Martins and Swart (3) have obtained: n = 1.23, n 0 = 1.02, and, correspondingly, p = 6, in agreement with our results from Fig. 3.…”
Section: Tunneling Coefficient and Its Ideality Factorsupporting
confidence: 89%
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“…. [12] For N E = 7x10 17 cm -3 , Martins and Swart (3) have obtained: n = 1.23, n 0 = 1.02, and, correspondingly, p = 6, in agreement with our results from Fig. 3.…”
Section: Tunneling Coefficient and Its Ideality Factorsupporting
confidence: 89%
“…The technological doping concentrations of the emitter-base junction, determined by SIMS, are: N E = 7x10 16 cm -3 and N B = 2x10 18 cm -3 . This stress induced by silicon nitride layer under the emitter mesa sidewall produces a piezoelectric-like effect (12)(13)(14)(15). This changes drastically the effective concentrations from this region (15), which become: N E = 1.7x10 18 cm -3 and N B = 5x10 18 cm -3 .…”
Section: Methodsmentioning
confidence: 99%
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“…[1][2][3][4][5][6] This mechanism is absent in C-doped base HBTs, 7 but even in these devices one can observe gain degradation in some cases when collector current densities approach 10 5 A cm Ϫ2 . For devices with high base doping levels ͑Ͼ4ϫ10 19 cm Ϫ3 ͒ of Be, Zn, or Mg, the current gain may decrease during operation due to recombination enhanced diffusion of charged interstitial dopants into the adjoining emitter layer.…”
Section: Introductionmentioning
confidence: 99%