Stress development of direct-patternable PZT film for applying to micro-detecting system

Abstract

Direct-patternable lead zirconate titanate (PZT) film was prepared by sol-gel technique using orthnitrobenzaldehyde as a photosensitive agent. For applying this direct-patternable PZT ferroelectric film to micro electromechanical system, a development of stress in the film was investigated by modifying the anneal condition and the constituents of PZT sol. The residual stress in the conventional and modified (for stress-release) direct-patternable PZT films was investigated by the Raman spectroscopy. In addition, ferroelectric properties of modified PZT film were compared with those of conventional film. Finally, we assess the applying feasibility of direct-patternable PZT film to microdetecting system.

Determination of residual stress in PZT films produced by laser ablation with X-ray diffraction and Raman spectroscopy

“…From Fig. 2, it is possible to see that the silent mode (B 1 + E) (at ≈280 cm −1 ) appears to be independent of the applied stress for each PZT composition [12]:…”