Stress and morphological development of CdS and ZnS thin films during the SILAR growth on (1 0 0)GaAs

Laukaitis, Giedrius; Lindroos, Seppo; Tamulevičius, Sigitas; Leskelä, Markku

doi:10.1016/s0169-4332(01)00775-9

Cited by 57 publications

(15 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a general trend, the particles forming the films, the dimensions of which were higher than the nanocrystal ones estimated using GIXRD, were probably composed of several crystallites and/or some amorphous phase. [37] Interesting information was gained from the dependence of AFM grain size on heating temperatures (Fig. 4b).…”

Section: Film Deposition and Characterizationmentioning

confidence: 99%

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Barreca¹,

Gasparotto

Maragno

et al. 2004

Chemical Vapor Deposition

View full text Add to dashboard Cite

Nanostructured Zn x Cd 1 ± x S (0 £ x £ 1) thin films were synthesized by CVD on SiO 2 substrates using M(Oi PrXan) 2 (M = Zn,Cd; Oi PrXan = S 2 COCH(CH 3 ) 2 ) as precursor compounds. The method of preparation used consisted in the sequential deposition of single-phase MS coatings (M = Zn,Cd) at 300 C in a N 2 flow, followed by ex-situ annealing in an inert atmosphere at various temperatures in the range 400±700 C. The obtained specimens were thoroughly characterized before and after thermal treatments, paying particular attention to their structure, composition, morphology, and optical properties. Annealing in N 2 at 600 C for 3 h resulted in the formation of a homogeneous Zn x Cd 1 ± x S solid solution. Lower temperatures did not produce a uniform sample composition, while more severe annealing conditions induced CdS sublimation. Moreover, a compositional control of the Zn x Cd 1 ± x S ternary phase could be achieved by varying the ZnS overlayer deposition time.Irrespective of the annealing conditions, all the obtained films were contaminant-free and nanophasic (AE »25 nm), and possessed a hexagonal crystal structure the lattice parameters of which decreased linearly with increasing zinc molar fraction. A parallel evolution of optical absorption spectra was also observed. In the present paper, the interrelations between film properties and processing conditions are investigated, focusing particularly on the (Zn,Cd)S evolution to Zn x Cd 1 ± x S solid solutions.

show abstract

Section: Film Deposition and Characterizationmentioning

confidence: 99%

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

Barreca¹,

Gasparotto

Maragno

et al. 2004

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…4 -6 For such applications, the system properties have been tailored by controlled modifications of the crystal structure 7,8 and morphology, 9 exploiting the versatility of suitable bottom-up synthetic routes. In this context, chemical vapor deposition (CVD) has attracted much attention as a possible method for the production of thin-film optoelectronic devices under mild and controlled conditions.…”

Section: Introductionmentioning

confidence: 99%

CadmiumO-alkylxanthates as CVD precursors of CdS: a chemical characterization

Barreca

Gasparotto

Maragno

et al. 2005

Appl. Organometal. Chem.

View full text Add to dashboard Cite

“…It is important to note that surface roughness was is observed to have be increased as increasing the thickness of the Ag layer was increased. This can cause more scattering of the incident light, resulting in the reduction of transmission [11].…”

Section: Resultsmentioning

confidence: 99%

Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

Lee¹

2017

Transactions on Electrical and Electronic Materials

View full text Add to dashboard Cite

Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

show abstract

Stress and morphological development of CdS and ZnS thin films during the SILAR growth on (1 0 0)GaAs

Cited by 57 publications

References 21 publications

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

CVD of Nanophasic (Zn, Cd)S Thin Films: From Multi‐Layers to Solid Solutions

CadmiumO-alkylxanthates as CVD precursors of CdS: a chemical characterization

Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

Contact Info

Product

Resources

About